X-On Electronics has gained recognition as a prominent supplier of SI1028X-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1028X-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1028X-T1-GE3 Vishay

SI1028X-T1-GE3 electronic component of Vishay
SI1028X-T1-GE3 Vishay
SI1028X-T1-GE3 MOSFETs
SI1028X-T1-GE3  Semiconductors

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Part No. SI1028X-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET DUAL N-CHANNEL 30-V (D-S) MOSFET
Datasheet: SI1028X-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 453
Multiples : 1
453 : USD 0.1388
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Obsolete
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MOQ : 1
Multiples : 1
1 : USD 0.3882
10 : USD 0.3027
25 : USD 0.2006
100 : USD 0.1504
250 : USD 0.1381
500 : USD 0.1316
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5079
10 : USD 0.2946
100 : USD 0.1715
500 : USD 0.14
1000 : USD 0.1072
3000 : USD 0.0937
6000 : USD 0.0892
9000 : USD 0.0813
24000 : USD 0.0677
N/A

Obsolete
   
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We are delighted to provide the SI1028X-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1028X-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si1028X Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g ESD Protected: 550 V Typical HBM 0.650 at V = 10 V 0.48 Material categorization: GS 30 0.5 For definitions of compliance please see 0.770 at V = 4.5 V 0.45 GS www.vishay.com/doc 99912 BENEFITS Low Offset Voltage Low-Voltage Operation High-Speed Circuits Small Board Area APPLICATIONS Load/Signal Switching for Portable Devices Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems SC-89 S 1 6D 1 1 Marking Code G XX G 2 5 G 1 2 Lot Traceability and Date Code D 3 4 S 2 2 Part Code Top View Ordering Information: Si1028X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS a, b T = 25 C A 0.48 a I Continuous Drain Current (T = 150 C) D J a, b T = 70 C A A 0.45 I 1 Pulsed Drain Current (t = 300 s) DM a, b Continuous Source-Drain Diode Current T = 25 C I A A S 0.18 a, b T = 25 C 0.22 A a P W Maximum Power Dissipation D a, b T = 70 C A 0.14 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typ.Max. Unit t 5 s 470 565 b R C/W Maximum Junction-to-Ambient thJA Steady State 560 675 Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 5 s. Document Number: 63862 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-1956-Rev. B, 13-Aug-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYSi1028X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 33 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.8 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 12.5V GS(th) DS GS D V = 0 V, V = 20 V 20 DS GS I Gate-Source Leakage GSS V = 0 V, V = 4.5 V 1 DS GS A V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I DSS V = 30 V, V = 0 V, T = 85 C 10 DS GS J a I 1A On-State Drain Current D(on) V = 5 V, V = 10 V DS GS V = 10 V, I = 0.5 A 0.540 0.650 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 0.2 A 0.640 0.770 GS D Forward Transconductance g V = 10 V, I = 0.5 A 1S fs DS D b Dynamic Input Capacitance C 16 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 8 pF oss DS GS Reverse Transfer Capacitance C 4 rss V = 15 V, V = 10 V, I = 0.5 A 12 DS GS D Total Gate Charge Q g 0.5 1 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 0.5 A 0.15 gs DS GS D Gate-Drain Charge Q 0.20 gd R Gate Resistance f = 1 MHz 50 g Turn-On Delay Time t 816 d(on) t Rise Time V = 15 V, R = 37.5 10 20 r DD L I 0.38 A, V = 4.5 V, R = 1 Turn-Off Delay Time t D GEN g 918 d(off) t Fall Time 816 f ns Turn-On Delay Time t 24 d(on) Rise Time t 918 V = 15 V, R = 37.5 r DD L I 0.38 A, V = 10 V, R = 1 Turn-Off Delay Time t D GEN g 714 d(off) Fall Time t 816 f Drain-Source Body Diode Characteristics a I 1A Pulse Diode Forward Current SM Body Diode Voltage V I = 0.38 A 0.8 1.2 V SD S Body Diode Reverse Recovery Time t 918 ns rr Body Diode Reverse Recovery Charge Q 24 nC rr I = 0.38 A, dI/dt = 100 A/s F t Reverse Recovery Fall Time 5 a ns Reverse Recovery Rise Time t 4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 63862 2 S12-1956-Rev. B, 13-Aug-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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