Si1034X Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (mA) DS DS(on) D Definition 5 at V = 4.5 V 200 GS TrenchFET Power MOSFET: 1.5 V Rated 7 at V = 2.5 V 175 Low-Side Switching GS 20 Low On-Resistance: 5 9 at V = 1.8 V 150 GS Low Threshold: 0.9 V (typ.) 10 at V = 1.5 V 50 GS Fast Switching Speed: 35 ns (typ.) 1.5 V Operation Gate-Source ESD Protected: 2000 V Compliant to RoHS Directive 2002/95/EC SC-89 BENEFITS S 1 6D 1 1 Ease in Driving Switches Low Offset (Error) Voltage G 2 5 G Marking Code: L 1 2 Low-Voltage Operation High-Speed Circuits D 3 4 S 2 2 Low Battery Voltage Operation Top View APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Ordering Information: Si1034X-T1-GE3 (Lead (Pb)-free and Halogen-free) Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 20 DS V V Gate-Source Voltage 5 GS T = 25 C 190 180 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 140 130 A mA b I 650 Pulsed Drain Current DM Continuous Source Current (Diode Conduction) I 450 380 S T = 25 C 280 250 A a P mW Maximum Power Dissipation D T = 85 C 145 130 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71427 www.vishay.com S10-2544-Rev. C, 08-Nov-10 1Si1034X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Gate Threshold Voltage V V = V , I = 250 A 0.40 1.2V GS(th) DS GS D V = 0 V, V = 2.8 V 0.5 1.0 DS GS I Gate-Body Leakage A GSS V = 0 V, V = 4.5 V 1.0 3.0 DS GS V = 16 V, V = 0 V 1 500 nA DS GS I Zero Gate Voltage Drain Current DSS V = 16 V, V = 0 V, T = 85 C 10 A DS GS J a I V = 5 V, V = 4.5 V 250 mA On-State Drain Current D(on) DS GS V = 4.5 V, I = 200 mA 5 GS D V = 2.5 V, I = 175 mA Drain-Source On-State 7 GS D R DS(on) a Resistance V = 1.8 V, I = 150 mA 9 GS D V = 1.5 V, I = 40 mA 10 DS D a g V = 10 V, I = 200 mA 0.5 S Forward Transconductance fs DS D a V I = 150 mA, V = 0 V 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 750 g Q V = 10 V, V = 4.5 V, I = 150 mA Gate-Source Charge 75 pC gs DS GS D Gate-Drain Charge Q 225 gd t Turn-On Delay Time 50 d(on) t Rise Time V = 10 V, R = 47 25 r DD L ns I 200 mA, V = 4.5 V, R = 10 t Turn-Off Delay Time D GEN g 50 d(off) t Fall Time 25 f Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise noted) A 600 0.5 T = - 55 C J V = 5 V thru 1.8 V GS 500 0.4 25 C 400 0.3 125 C 300 0.2 200 0.1 100 1 V 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0123456 V - Gate-to-Source Voltage (V) GS V - Drain-to-Source Voltage (V) DS Transfer Characteristics Output Characteristics www.vishay.com Document Number: 71427 2 S10-2544-Rev. C, 08-Nov-10 I - Drain Current (A) D I - Drain Current (mA) D