Si1021R Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )V (V) I (mA) DS(min.) DS(on) GS(th) D Definition - 60 4.0 at V = - 10 V - 1 to 3.0 - 190 GS TrenchFET Power MOSFETs High-Side Switching Low On-Resistance: 4 Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (typ.) Low Input Capacitance: 20 pF (typ.) Miniature Package SC-75A ESD Protected: 2000 V (SOT-416) Compliant to RoHS Directive 2002/95/EC G 1 APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, D 3 Memories, Transistors, etc. Battery Operated Systems Marking Code: F S 2 Power Supply Converter Circuits Solid-State Relays Top View BENEFITS Ordering Information: Si1021R-T1-GE3 (Lead (Pb)-free and Halogen-free) Ease in Driving Switches Low Offset Voltage Low-Voltage Operation High-Speed Circuits Easily Driven without Buffer Small Board Area ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V - 60 DS V Gate-Source Voltage V 20 GS T = 25 C - 190 A a Continuous Drain Current (T = 150 C) I J D T = 85 C - 135 mA A b Pulsed Drain Current I - 650 DM T = 25 C 250 A a Power Dissipation P mW D T = 85 C 130 A a Maximum Junction-to-Ambient R 500 C/W thJA Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71410 www.vishay.com S10-2687-Rev. F, 22-Nov-10 1Si1021R Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 10 A - 60 DS GS D V Gate-Threshold Voltage V V = V , I = - 0.25 mA - 1 - 3.0 GS(th) DS GS D V = 0 V, V = 20 V 10 A DS GS V = 0 V, V = 10 V 200 DS GS Gate-Body Leakage I GSS V = 0 V, V = 10 V, T = 85 C 500 DS GS J V = 0 V, V = 5 V 100 nA DS GS V = - 50 V, V = 0 V - 25 DS GS Zero Gate Voltage Drain Current I DSS V = - 50 V, V = 0 V, T = 85 C - 250 DS GS J V = -10 V, V = - 4.5 V - 50 DS GS a On-State Drain Current I mA D(on) V = -10 V, V = - 10 V - 600 DS GS V = - 4.5 V, I = - 25 mA 8 GS D a Drain-Source On-State Resistance R V = - 10 V, I = - 500 mA 4 DS(on) GS D V = - 10 V, I = - 500 mA, T = 125 C 6 GS D J Forward Transconductance g V = - 10 V, I = - 100 mA 80 mS fs DS D a Diode Forward Voltage V V = - 200 mA, V = 0 V 80 V SD DS GS Dynamic Total Gate Charge Q 1.7 g Gate-Source Charge Q V = - 30 V, V = - 15 V, I - 500 mA 0.26 nC gs DS GS D Gate-Drain Charge Q 0.46 gd Input Capacitance C 23 iss Output Capacitance C 10V = - 25 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 5 rss b Switching Turn-On Time t 20 ON V = - 25 V, R = 150 , DD L ns I - 200 mA, V = - 10 V, R = 10 Turn-Off Time t D GEN g 35 OFF Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71410 2 S10-2687-Rev. F, 22-Nov-10