Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (mA) DS DS(on) D Definition 1.40 at V = 10 V 500 GS TrenchFET Power MOSFETs N-Channel 60 3 at V = 4.5 V 200 Very Small Footprint GS High-Side Switching 4 at V = - 10 V - 500 GS P-Channel - 60 Low On-Resistance: 8 at V = - 4.5 V - 25 GS N-Channel, 1.40 P-Channel, 4 Low Threshold: 2 V (typ.) SC-89 Fast Switching Speed: 15 ns (typ.) Gate-Source ESD Protected: 2000 V S 1 1 6 D 1 Compliant to RoHS Directive 2002/95/EC Marking Code: H BENEFITS 2 5 G G 1 2 Ease in Driving Switches Low Offset (Error) Voltage D 3 4 S 2 2 Low-Voltage Operation High-Speed Circuits Top View Ordering Information: Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS Replace Digital Transistor, Level-Shifter Battery Operated Systems Power Supply Converter Circuits ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Unit Drain-Source Voltage V 60 - 60 DS V V Gate-Source Voltage 20 GS T = 25 C 320 305 - 200 - 190 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 230 220 - 145 - 135 A mA b I 650 - 650 Pulsed Drain Current DM a I 450 380 - 450 - 380 Continuous Source Current (Diode Conduction) S T = 25 C 280 250 280 250 A a P mW Maximum Power Dissipation D T = 85 C 145 130 145 130 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71435 www.vishay.com S10-2432-Rev. C, 25-Oct-10 1Si1029X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = 0 V, I = 10 A N-Ch 60 GS D Drain-Source Breakdown Voltage V DS V = 0 V, I = - 10 A P-Ch - 60 GS D V V = V , I = 250 A N-Ch 1 2.5 DS GS D V Gate Threshold Voltage GS(th) V = V , I = - 250 A P-Ch - 1 - 3.0 DS GS D N-Ch 50 V = 0 V, V = 5 V DS GS P-Ch 100 I Gate-Body Leakage GSS N-Ch 150 V = 0 V, V = 10 V DS GS P-Ch 200 nA V = 50 V, V = 0 V N-Ch 10 DS GS V = - 50 V, V = 0 V P-Ch - 25 DS GS Zero Gate Voltage Drain Current I DSS V = 50 V, V = 0 V, T = 85 C N-Ch 100 DS GS J V = - 50 V, V = 0 V, T = 85 C P-Ch - 250 DS GS J V = 10 V, V = 4.5 V N-Ch 500 DS GS V = - 10 V, V = - 4.5 V P-Ch - 50 DS GS a I mA On-State Drain Current D(on) V = 7.5 V, V = - 4.5 V N-Ch 800 DS GS V = - 10 V, V = - 10 V P-Ch - 600 DS GS V = 4.5 V, I = 200 mA N-Ch 3 GS D V = - 4.5 V, I = - 25 mA P-Ch 8 GS D Drain-Source On-State V = 10 V, I = 500 mA N-Ch 1.40 GS D R DS(on) a Resistance V = - 10 V, I = - 500 mA P-Ch 4 GS D V = 10 V, I = 500 mA, T = 125 C N-Ch 2.50 GS D J V = - 10 V, I = - 500 mA, T = 125 C P-Ch 6 GS D J V = 10 V, I = 200 mA N-Ch 200 DS D a g ms Forward Transconductance fs V = - 10 V, I = - 100 mA P-Ch 100 DS D I = 200 mA, V = 0 V N-Ch 1.4 S GS a V V Diode Forward Voltage SD I = - 200 mA, V = 0 V P-Ch - 1.4 S GS b Dynamic N-Ch 750 Total Gate Charge Q g N-Channel P-Ch 1700 V = 10 V, V = 4.5 V, I = 250 mA DS GS D N-Ch 75 Q Gate-Source Charge pC gs P-Ch 260 P-Channel N-Ch 225 V = - 30 V, V = - 15 V, I = - 500 mA DS GS D Q Gate-Drain Charge gd P-Ch 460 N-Ch 30 Input Capacitance C iss N-Channel P-Ch 23 V = 25 V, V = 0 V, f = 1 MHz DS GS N-Ch 6 C Output Capacitance pF oss P-Ch 10 P-Channel V = - 25 V, V = 0 V, f = 1 MHz N-Ch 3 DS GS C Reverse Transfer Capacitance rss P-Ch 5 N-Channel N-Ch 15 c t V = 30 V, R = 150 Turn-On Time ON DD L I 200 mA, V = 10 V, R = 10 P-Ch 20 D GEN g ns P-Channel N-Ch 20 c t V = - 25 V, R = 150 Turn-Off Time OFF DD L I - 165 mA, V = - 10 V, R = 10 P-Ch 35 D GEN g Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71435 2 S10-2432-Rev. C, 25-Oct-10