Si1050X Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.086 at V = 4.5 V GS 1.34 TrenchFET Power MOSFET 100 % R Tested 0.093 at V = 2.5 V 1.29 g GS 8 7.1 Compliant to RoHS Directive 2002/95/EC 0.102 at V = 1.8 V 1.23 GS 0.120 at V = 1.5 V 0.7 GS APPLICATIONS Load Switch for Portable Devices SC-89 (6-LEADS) D 1 6 D M a rking Code 5 D 2 D Q XX Lot Tra ce ability a nd D a te Code G 3 4 S P a rt Code Top View Ordering Information: Si1050X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 8 DS V Gate-Source Voltage V 5 GS b, c T = 25 C A 1.34 a I Continuous Drain Current (T = 150 C) D J b, c T = 70 C A 1.07 A I 6 Pulsed Drain Current DM b, c T = 25 C I Continuous Source-Drain Diode Current A S 0.2 b, c T = 25 C A 0.236 a P W Maximum Power Dissipation D b, c T = 70 C A 0.151 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 440 530 b, d R C/W Maximum Junction-to-Ambient thJA Steady State 540 650 Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 C/W. Document Number: 73896 www.vishay.com S10-2544-Rev. D, 08-Nov-10 1 Y Y Si1050X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 8V DS GS D V Temperature Coefficient V /T 18.2 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.55 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.35 0.9 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 5 V 100 nA GSS DS GS V = 8 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 8 V, V = 0 V, T = 85 C 10 DS GS J a I V = 5 V, V = 4.5 V 6 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 1.34 A 0.071 0.086 GS D V = 2.5 V, I = 1.29 A 0.078 0.093 GS D a R Drain-Source On-State Resistance DS(on) V = 1.8 V, I = 1.23 A 0.085 0.102 GS D V = 1.5 V, I = 0.76 A 0.092 0.120 GS D g V = 4 V, I = 1.34 A Forward Transconductance 4.12 S fs DS D b Dynamic C Input Capacitance 585 iss C V = 4 V, V = 0 V, f = 1 MHz Output Capacitance 190 pF oss DS GS C Reverse Transfer Capacitance 130 rss V = 4 V, V = 5 V, I = 1.34 A 7.7 11.6 DS GS D Q Total Gate Charge g 7.1 10.7 nC Q V = 4 V, V = 4.5 V, I = 1.34 A Gate-Source Charge 1.14 gs DS GS D Q Gate-Drain Charge 1.69 gd R Gate Resistance f = 1 MHz 3.5 4.6 g t Turn-On Delay Time 6.8 10.2 d(on) t V = 4 V, R = 3.6 Rise Time 35 53 r DD L ns t I 1.1 A, V = 4.5 V, R = 1 Turn-Off DelayTime 25 37.5 d(off) D GEN g t Fall Time 69 f Drain-Source Body Diode Characteristics a I 6A Pulse Diode Forward Current SM V I = 1.0 A Body Diode Voltage 0.8 1.2 V SD S t Body Diode Reverse Recovery Time 18.5 28 nC rr Q Body Diode Reverse Recovery Charge 3.7 5.7 rr I = 1.0 A, dI/dt = 100 A/s F t Reverse Recovery Fall Time 6.7 ns a t Reverse Recovery Rise Time 11.8 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73896 2 S10-2544-Rev. D, 08-Nov-10