Si1073X Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.173 at V = - 10 V - 0.98 GS TrenchFET Power MOSFET - 30 3.25 0.243 at V = - 4.5 V - 0.83 GS 100 % R and UIS Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch SC-89 (6-LEADS) S D 1 6 D Marking Code 1 XX 5 D 2 D G Lot Traceability and Date Code G 3 4 S Part Code Top View D Ordering Information: Si1073X-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS b, c T = 25 C - 0.98 A a I Continuous Drain Current (T = 150 C) D J b, c T = 70 C A - 0.78 A I - 8 Pulsed Drain Current DM Avalanche Current I - 6 AS L = 0.1 mH E Repetitive Avalanche Energy 1.8 mJ AS b, c Continuous Source-Drain Diode Current T = 25 C I A 0.2 A S b, c T = 25 C W A 0.236 a P Maximum Power Dissipation D b, c T = 70 C A 0.151 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 440 530 b, d R C/W Maximum Junction-to-Ambient thJA Steady State 540 650 Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 C/W. Document Number: 74285 www.vishay.com S10-2542-Rev. D, 08-Nov-10 1 Y Y Si1073X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test ConditionsMin.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 30.7 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3.78 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 85 C - 10 DS GS J a I V = 5 V, V = - 10 V - 8 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 0.98 A 0.144 0.173 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 0.83 A 0.202 0.243 GS D Forward Transconductance g V = - 15 V, I = - 0.98 A 3.52 S fs DS D b Dynamic C Input Capacitance 265 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 51 pF oss DS GS C Reverse Transfer Capacitance 39 rss V = - 15 V, V = - 4.5 V, I = - 0.98 A 3.25 4.88 DS GS D Q Total Gate Charge g 6.3 9.45 nC Q V = - 15 V, V = - 10 V, I = - 0.98 A Gate-Source Charge 1.02 gs DS GS D Q Gate-Drain Charge 1.47 gd R Gate Resistance f = 1 MHz 14 21 g Turn-On Delay Time t 69 d(on) t Rise Time V = - 15 V, R = 19.2 10 15 r DD L I - 0.78 A, V = - 10 V, R = 1 t Turn-Off DelayTime D GEN g 14 21 d(off) Fall Time t 69 f ns t Turn-On Delay Time 26 39 d(on) Rise Time t 28 42 V = - 15 V, R = 22.72 r DD L I - 0.66 A, V = - 4.5 V, R = 1 t Turn-Off DelayTime D GEN g 28 42 d(off) t Fall Time 12 18 f Drain-Source Body Diode Characteristics a I 8A Pulse Diode Forward Current SM V I = - 0.63 A Body Diode Voltage 0.8 1.2 V SD S t Body Diode Reverse Recovery Time 14.3 21.45 nC rr Q Body Diode Reverse Recovery Charge 12.16 18.25 rr I = - 0.7 A, dI/dt = 100 A/s F Reverse Recovery Fall Time t 11.1 ns a t Reverse Recovery Rise Time 3.2 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74285 2 S10-2542-Rev. D, 08-Nov-10