X-On Electronics has gained recognition as a prominent supplier of NDS8435A MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDS8435A MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDS8435A ON Semiconductor

NDS8435A electronic component of ON Semiconductor
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See Product Specifications
Part No.NDS8435A
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Single P-Ch FET Enhancement Mode
Datasheet: NDS8435A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
401: USD 1.0163 ea
Line Total: USD 407.54 
Availability - 0
MOQ: 401  Multiples: 401
Pack Size: 401
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 1.0082
10 : USD 0.9913
100 : USD 0.8553
250 : USD 0.742
1000 : USD 0.6004
1500 : USD 0.5891

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 401
Multiples : 401
401 : USD 1.0163

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the NDS8435A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDS8435A and other electronic components in the MOSFETs category and beyond.

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March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -7.9 A, -30 V. R = 0.023 V = -10 V DS(ON) GS transistors are produced using Fairchild s proprietary, high cell R = 0.035 V = -4.5V. DS(ON) GS density, DMOS technology. This very high density process is High density cell design for extremely low R DS(ON). especially tailored to minimize on-state resistance and provide High power and current handling capability in a widely used superior switching performance. These devices are particularly surface mount package. suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 4 5 6 3 2 7 8 1 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter NDS8435A Units V Drain-Source Voltage -30 V DSS V Gate-Source Voltage 20 V GSS I Drain Current - Continuous (Note 1a) -7.9 A D - Pulsed -25 P Maximum Power Dissipation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T ,T Operating and Storage Temperature Range -55 to 150 C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W R JA R Thermal Resistance, Junction-to-Case (Note 1) 25 C/W JC 1997 Fairchild Semiconductor Corporation NDS8435A Rev.C1Electrical Characteristics (T = 25C unless otherwise noted) A Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage V = 0 V, I = -250 A -30 V DSS GS D I Zero Gate Voltage Drain Current V = -24 V, V = 0 V -1 A DSS DS GS T = 55C -10 A J I Gate - Body Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate - Body Leakage, Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V = V , I = -250 A -1 -1.3 -3 V GS(th) DS GS D T = 125C -0.7 -1 -2.2 J R Static Drain-Source On-Resistance V = -10 V, I = -7.9 A 0.02 0.023 DS(ON) GS D T = 125C 0.027 0.041 J V = -4.5 V, I = -6.5 A 0.03 0.035 GS D On-State Drain Current -25 A I V = -10 V, V = -5 V D(on) GS DS -10 V = -4.5, V = -5 V GS DS g Forward Transconductance V = -10 V, I = -7.9 A -17 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = -15 V, V = 0 V, 1800 pF iss DS GS f = 1.0 MHz Output Capacitance 950 pF C oss C Reverse Transfer Capacitance 240 pF rss SWITCHING CHARACTERISTICS (Note 2) t Turn - On Delay Time V = -10 V, I = -1 A, 11 22 ns D(on) DD D V = -10 V, R = 6 GEN GEN t Turn - On Rise Time 20 35 ns r t Turn - Off Delay Time 95 180 ns D(off) t Turn - Off Fall Time 46 100 ns f Q Total Gate Charge V = -15 V, 48 67 nC g DS I = -7.9 A, V = -10 V D GS Q Gate-Source Charge 6 nC gs Gate-Drain Charge 12 nC Q gd NDS8435A Rev.C1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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