X-On Electronics has gained recognition as a prominent supplier of NDS9959 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDS9959 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDS9959 ON Semiconductor

NDS9959 electronic component of ON Semiconductor
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See Product Specifications
Part No.NDS9959
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Dual N-Ch FET Enhancement Mode
Datasheet: NDS9959 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7663 ea
Line Total: USD 0.77 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7663
10 : USD 0.7547
125 : USD 0.6611
750 : USD 0.4914
1500 : USD 0.4563

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NDS9959 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDS9959 and other electronic components in the MOSFETs category and beyond.

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February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 2.0A, 50V. R = 0.3 V = 10V DS(ON) GS transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low R . DS(ON) especially tailored to minimize on-state resistance, provide High power and current handling capability in a widely used superior switching performance, and withstand high energy surface mount package. pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such Dual MOSFET in surface mount package. as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. 5 4 3 6 2 7 8 1 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter NDS9959 Units V Drain-Source Voltage 50 V DSS V Gate-Source Voltage 20 V GSS I Drain Current - Continuous T = 25C (Note 1a) 2.0 A D A - Continuous T = 70C (Note 1a) 1.6 A - Pulsed T = 25C 8 A P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W R JA Thermal Resistance, Junction-to-Case (Note 1) 40 C/W R JC 1997 Fairchild Semiconductor Corporation NDS9959.SAMElectrical Characteristics (T = 25C unless otherwise noted) A Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage V = 0 V, I = 250 A 50 V DSS GS D I Zero Gate Voltage Drain Current V = 40 V, V = 0 V 2 A DSS DS GS T = 55C 25 A J I Gate - Body Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate - Body Leakage, Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS ON CHARACTERISTICS (Note2) V Gate Threshold Voltage V = V , I = 250 A 2 3 4 V GS(th) DS GS D R Static Drain-Source On-Resistance V = 10 V, I = 1.5 A 0.3 DS(ON) GS D 0.5 V = 5 V, I = 0.6 A GS D I On-State Drain Current V = 10 V, V = 5 V 8 A D(on) GS DS g Forward Transconductance V = 15 V, I = 2.0 A 1 2.7 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 25 V, V = 0 V, 152 250 pF iss DS GS f = 1.0 MHz C Output Capacitance 50 85 pF oss C Reverse Transfer Capacitance 12 25 pF rss SWITCHING CHARACTERISTICS (Note 2) t Turn - On Delay Time V = 30 V, I = 0.6 A, 4 40 ns D(on) DD D V = 10 V, R = 50 , t Turn - On Rise Time GS L 8 70 ns r R = 6 GEN t Turn - Off Delay Time 9 100 ns D(off) t Turn - Off Fall Time 11 70 ns f Q Total Gate Charge V = 25 V, 4.3 15 nC g DS I = 1.3 A, V = 10 V D GS Gate-Source Charge 1.1 nC Q gs Q Gate-Drain Charge 1.5 nC gd NDS9959.SAM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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