February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 2.0A, 50V. R = 0.3 V = 10V DS(ON) GS transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low R . DS(ON) especially tailored to minimize on-state resistance, provide High power and current handling capability in a widely used superior switching performance, and withstand high energy surface mount package. pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such Dual MOSFET in surface mount package. as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. 5 4 3 6 2 7 8 1 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter NDS9959 Units V Drain-Source Voltage 50 V DSS V Gate-Source Voltage 20 V GSS I Drain Current - Continuous T = 25C (Note 1a) 2.0 A D A - Continuous T = 70C (Note 1a) 1.6 A - Pulsed T = 25C 8 A P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W R JA Thermal Resistance, Junction-to-Case (Note 1) 40 C/W R JC 1997 Fairchild Semiconductor Corporation NDS9959.SAMElectrical Characteristics (T = 25C unless otherwise noted) A Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage V = 0 V, I = 250 A 50 V DSS GS D I Zero Gate Voltage Drain Current V = 40 V, V = 0 V 2 A DSS DS GS T = 55C 25 A J I Gate - Body Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate - Body Leakage, Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS ON CHARACTERISTICS (Note2) V Gate Threshold Voltage V = V , I = 250 A 2 3 4 V GS(th) DS GS D R Static Drain-Source On-Resistance V = 10 V, I = 1.5 A 0.3 DS(ON) GS D 0.5 V = 5 V, I = 0.6 A GS D I On-State Drain Current V = 10 V, V = 5 V 8 A D(on) GS DS g Forward Transconductance V = 15 V, I = 2.0 A 1 2.7 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 25 V, V = 0 V, 152 250 pF iss DS GS f = 1.0 MHz C Output Capacitance 50 85 pF oss C Reverse Transfer Capacitance 12 25 pF rss SWITCHING CHARACTERISTICS (Note 2) t Turn - On Delay Time V = 30 V, I = 0.6 A, 4 40 ns D(on) DD D V = 10 V, R = 50 , t Turn - On Rise Time GS L 8 70 ns r R = 6 GEN t Turn - Off Delay Time 9 100 ns D(off) t Turn - Off Fall Time 11 70 ns f Q Total Gate Charge V = 25 V, 4.3 15 nC g DS I = 1.3 A, V = 10 V D GS Gate-Source Charge 1.1 nC Q gs Q Gate-Drain Charge 1.5 nC gd NDS9959.SAM