AYW 5002N NIF5002N Preferred Device SelfProtected FET with Temperature and Current Limit 42 V, 2.0 A, Single NChannel, SOT223 NIF5002N THERMAL CHARACTERISTICS Characteristic Symbol Value Unit JunctiontoAmbient Steady State (Note 1) R 114 C/W JA JunctiontoAmbient Steady State (Note 2) R 72 JA JunctiontoTab Steady State (Note 3) R 14 JT 1. Surfacemounted onto min pad FR4 PCB, (2 oz. Cu, 0.06 thick). 2. Surfacemounted onto 2 sq. FR4 board (1 sq., 1 oz. Cu, 0.06 thick). 3. Surfacemounted onto min pad FR4 PCB, (2 oz. Cu, 0.06 thick). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V T = 25C 42 46 55 (BR)DSS J (Note 4) V = 0 V, I = 10 mA GS D T = 150C 40 45 55 J Zero Gate Voltage Drain Current I A T = 25C 0.25 4.0 DSS J V = 0 V, V = 32 V GS DS T = 150C 1.1 20 J Gate Input Current I V = 0 V, V = 5.0 V 50 100 A GSSF DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 150 A 1.3 1.8 2.2 V GS(th) GS DS D Gate Threshold Temperature Coefficient V /T 4.0 6.0 mV/C GS(th) J Static DraintoSource OnResistance R T = 25C 165 200 m DS(on) J V = 10 V, I = 1.7 A GS D T = 150C 305 400 J T = 25C 195 230 J V = 5.0 V, I = 1.7 A GS D T = 150C 360 460 J T = 25C 190 230 J V = 5.0 V, I = 0.5 A GS D T = 150C 350 460 J SourceDrain Forward On Voltage V V = 0 V, I = 7.0 A 1.0 V SD GS S SWITCHING CHARACTERISTICS Turnon Time t V = 10 V, V = 12 V, 20 30 s d(on) GS DD I = 2.5 A, R = 4.7 , D L Turnoff Time t 65 100 d(off) (10% V to 90% I ) in D V s Slew Rate On dV /dt R = 4.7 , V = 0 to 10 V, 1.2 DS on L in V = 12 V, 70% to 50% DD SlewRate Off dV /dt R = 4.7 , V = 0 to 10 V, 0.5 DS off L in V = 12 V, 50% to 70% DD SELF PROTECTION CHARACTERISTICS (T = 25C unless otherwise noted) (Note 5) J Current Limit I A T = 25C 3.1 4.7 6.3 LIM J V = 10 V, V = 5.0 V DS GS T = 150C 2.0 3.2 4.3 J T = 25C 3.8 5.7 7.6 J V = 10 V, V = 10 V DS GS T = 150C 2.8 4.3 5.7 J Temperature Limit (Turnoff) T 150 175 200 C V = 5.0 V LIM(off) GS Temperature Limit (Circuit Reset) T V = 5.0 V 135 160 185 LIM(on) GS Temperature Limit (Turnoff) T V = 10 V 150 165 185 LIM(off) GS Temperature Limit (Circuit Reset) T V = 10 V 135 150 170 LIM(on) GS ESD ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J ElectroStatic Discharge Capability ESD Human Body Model (HBM) 4000 V Machine Model (MM) 400 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part.