X-On Electronics has gained recognition as a prominent supplier of RTR040N03TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTR040N03TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RTR040N03TL ROHM

RTR040N03TL electronic component of ROHM
RTR040N03TL ROHM
RTR040N03TL MOSFETs
RTR040N03TL  Semiconductors

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See Product Specifications
Part No. RTR040N03TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 2.5V Drive N-Chan
Datasheet: RTR040N03TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4909 ea
Line Total: USD 0.49 
Availability - 2352
Ship by Thu. 10 Apr to Mon. 14 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2352
Ship by Thu. 10 Apr to Mon. 14 Apr
MOQ : 1
Multiples : 1
1 : USD 0.4909
10 : USD 0.4062
100 : USD 0.2547
1000 : USD 0.2202
3000 : USD 0.1511
9000 : USD 0.1362
24000 : USD 0.1266
45000 : USD 0.1224
99000 : USD 0.1192

   
Manufacturer
Product Category
Transistor Polarity
Package / Case
Packaging
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Capacitance Ciss Typ
Current Id Max
Fall Time Tf
Pin Configuration
Pulse Current Idm
Rise Time
Termination Type
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
Voltage Vgs Th Max
Voltage Vgs Th Min
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We are delighted to provide the RTR040N03TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTR040N03TL and other electronic components in the MOSFETs category and beyond.

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RTR040N03 Datasheet Nch 30V 4A Middle Power MOSFET llOutline SOT-346T V 30V DSS SC-96 R (Max.) 48m DS(on) TSMT3 I 4.0A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking QV llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 4.0 A D *1 I Pulsed drain current 16 A DP V Gate - Source voltage 12 V GSS *2 P 1.0 W D Power dissipation *3 P 0.76 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20151020 - Rev.001 RTR040N03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 165 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 4.0A - 34 48 GS D Static drain - source *4 R V = 4.0V, I = 4.0A - 36 50 m DS(on) GS D on - state resistance V = 2.5V, I = 4.0A - 47 66 GS D R Gate resistance f = 1MHz, open drain - 6.4 - G Forward Transfer *4 Y V = 10V, I = 4.0A 4.0 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20151020 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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