RTQ040P02 Transistors DC-DC Converter (20V, 4.0A) RTQ040P02 External dimensions (Unit : mm) Features 1) Low on-resistance. (110m at 2.5V) TSMT6 2.8 2) High power package. 1.6 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Drain Applications (2) Drain DC-DC converter (3) Gate Each lead has same dimensions (4) Source (5) Drain (6) Drain Abbreviated symbol : TZ Equivalent circuit Structure Silicon P-channel (6) (5) (4) MOS FET 2 Packaging specifications 1 Package Taping Type Code TR (1) Drain Basic ordering unit (pieces) 3000 (2) Drain (3) Gate (1) (2) (3) RTQ040P02 (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE 1/4 0.4 0.16 (3) (2) (1) (5) (4) (6) 0.85 2.9RTQ040P02 Transistors Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 12 V Continuous I 4.0 A D Drain current 1 I 16 A Pulsed DP 1 Source current Continuous IS 1 A (Body diode) Pulsed ISP 16 A 2 Total power dissipation P 1.25 W D Tch 150 C Channel temperature Range of Storage temperature Tstg 55 to +150 C 1 Pw10 s, Duty cycle1% 2 Mounted on a ceramic board Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V(BR) DSS 20 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 20V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.7 2.0 V VDS= 10V, ID= 1mA 35 50 m ID= 4A, VGS= 4.5V Static drain-source on-state R 40 55 m I = 4A, V = 4V DS (on) D GS resistance 60 85 m ID= 2.0A, VGS= 2.5V Forward transfer admittance Yfs 3.5 SVDS= 10V, ID= 2.0A Input capacitance C 1350 pF V = 10V iss DS Output capacitance C 210 pF V =0V oss GS Reverse transfer capacitance Crss 150 pF f=1MHz Turn-on delay time td (on) 15 ns ID= 2.0A VDD 15V Rise time tr 35 ns VGS= 4.5V Turn-off delay time td (off) 60 ns RL=7.5 Fall time tf 30 ns RGS=10 Total gate charge Q 12.2 nC V 15V RL 3.75 g DD Gate-source charge Qgs 2.6 nC VGS= 4.5V RGS=10 Gate-drain charge Qgd3.4 nC ID= 4.0A Pulsed Body diode characteristics (source-drain characteristics) Forward voltage VSD 1.2 V IS= 1A, VGS=0V 2/4