X-On Electronics has gained recognition as a prominent supplier of RTQ040P02TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTQ040P02TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RTQ040P02TR ROHM

RTQ040P02TR electronic component of ROHM
RTQ040P02TR ROHM
RTQ040P02TR MOSFETs
RTQ040P02TR  Semiconductors

Images are for reference only
See Product Specifications
Part No. RTQ040P02TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET P-CH 20V 4A TSMT6
Datasheet: RTQ040P02TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.5357
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.3037
6000 : USD 0.3037
9000 : USD 0.3037
12000 : USD 0.2973
15000 : USD 0.2973
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.2328
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.2596
6000 : USD 0.2497
9000 : USD 0.2387
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the RTQ040P02TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTQ040P02TR and other electronic components in the MOSFETs category and beyond.

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RTQ040P02 Transistors DC-DC Converter (20V, 4.0A) RTQ040P02 External dimensions (Unit : mm) Features 1) Low on-resistance. (110m at 2.5V) TSMT6 2.8 2) High power package. 1.6 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Drain Applications (2) Drain DC-DC converter (3) Gate Each lead has same dimensions (4) Source (5) Drain (6) Drain Abbreviated symbol : TZ Equivalent circuit Structure Silicon P-channel (6) (5) (4) MOS FET 2 Packaging specifications 1 Package Taping Type Code TR (1) Drain Basic ordering unit (pieces) 3000 (2) Drain (3) Gate (1) (2) (3) RTQ040P02 (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE 1/4 0.4 0.16 (3) (2) (1) (5) (4) (6) 0.85 2.9RTQ040P02 Transistors Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 12 V Continuous I 4.0 A D Drain current 1 I 16 A Pulsed DP 1 Source current Continuous IS 1 A (Body diode) Pulsed ISP 16 A 2 Total power dissipation P 1.25 W D Tch 150 C Channel temperature Range of Storage temperature Tstg 55 to +150 C 1 Pw10 s, Duty cycle1% 2 Mounted on a ceramic board Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V(BR) DSS 20 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 20V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.7 2.0 V VDS= 10V, ID= 1mA 35 50 m ID= 4A, VGS= 4.5V Static drain-source on-state R 40 55 m I = 4A, V = 4V DS (on) D GS resistance 60 85 m ID= 2.0A, VGS= 2.5V Forward transfer admittance Yfs 3.5 SVDS= 10V, ID= 2.0A Input capacitance C 1350 pF V = 10V iss DS Output capacitance C 210 pF V =0V oss GS Reverse transfer capacitance Crss 150 pF f=1MHz Turn-on delay time td (on) 15 ns ID= 2.0A VDD 15V Rise time tr 35 ns VGS= 4.5V Turn-off delay time td (off) 60 ns RL=7.5 Fall time tf 30 ns RGS=10 Total gate charge Q 12.2 nC V 15V RL 3.75 g DD Gate-source charge Qgs 2.6 nC VGS= 4.5V RGS=10 Gate-drain charge Qgd3.4 nC ID= 4.0A Pulsed Body diode characteristics (source-drain characteristics) Forward voltage VSD 1.2 V IS= 1A, VGS=0V 2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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