0~0.1 RTR020P02FRA RTR020P02 Transistors AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTR020P02 RTR020P02FRA z Structure z External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 z Features ( ) 3 1) Low On-resistance. 2) Built-in G-S Protection Diode. (1) (2) 0.95 0.95 3) Small Surface Mount Package (TSMT3). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source z Application Abbreviated symbol : TX (3) Drain Power switching, DC / DC converter. z Packaging specifications z Equivalent circuit Package Taping (3) Type Code TL 3000 Basic ordering unit (pieces) RRTR020P02TR020P02FRA (1) 2 1 (2) (1) Gate (2) Source 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 12 V Continuous ID 2.0 A Drain current 1 Pulsed I 8.0 A DP Source current Continuous IS 0.8 A 1 (Body diode) Pulsed ISP 3.2 A 2 Total power dissipation PD 1.0 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 125 C / W Mounted on a ceramic board. Rev.A 1/4 1.6 2.8 0.3~0.6RTR020P02FRA RTR020P02 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I 10 AV =12V, V =0V GSS GS DS Drain-source breakdown voltage V(BR) DSS 20 VID=1mA, VGS=0V Zero gate voltage drain current IDSS 1 AV DS=20V, VGS=0V Gate threshold voltage VGS (th) 0.7 2.0 V VDS=10V, ID=1mA 100 135 m I =2.0A, V =4.5V D GS Static drain-source on-state RDS (on) 110 150 m ID=2.0A, VGS=4.0V resistance 180 250 m ID=1.0A, VGS=2.5V Forward transfer admittance Y 1.2 SV =10V, I =1.0A fs DS D Input capacitance Ciss 430 pF VDS=10V Output capacitance Coss 80 pF VGS=0V Reverse transfer capacitance Crss 55 pF f=1MHz td (on) Turn-on delay time 11 ns ID=1.0A VDD 15V tr Rise time 13 ns VGS=4.5V td (off) Turn-off delay time 38 ns RL=15 tf Fall time 12 ns RG=10 Total gate charge Qg 4.9 nC VDD 15V Gate-source charge Qgs 1.2 nC VGS=4.5V Gate-drain charge Qgd 1.3 nC ID=2.0A Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=0.8A, VGS=0V Rev.A 2/4