X-On Electronics has gained recognition as a prominent supplier of RTR025P02FRATL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTR025P02FRATL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RTR025P02FRATL ROHM

RTR025P02FRATL electronic component of ROHM
RTR025P02FRATL ROHM
RTR025P02FRATL MOSFETs
RTR025P02FRATL  Semiconductors

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See Product Specifications
Part No. RTR025P02FRATL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET P Trench 20V 2.5A 2V @ 1mA 95 mΩ @ 2.5A,4.5V TSMT3 RoHS
Datasheet: RTR025P02FRATL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.5542 ea
Line Total: USD 2.77 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 5
Multiples : 1
5 : USD 0.5542
10 : USD 0.4409
100 : USD 0.3291
500 : USD 0.2799
1000 : USD 0.2244

0
Ship by Wed. 14 May to Mon. 19 May
MOQ : 1
Multiples : 1
1 : USD 0.3463
10 : USD 0.2851
30 : USD 0.2589
100 : USD 0.2262
500 : USD 0.2117
1000 : USD 0.2031
3000 : USD 0.2009
6000 : USD 0.1994

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RTR025P02FRATL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTR025P02FRATL and other electronic components in the MOSFETs category and beyond.

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RTR025P02FRA Datasheet Pch -20V -2.5A Small Signal MOSFET llOutline SOT-346T V -20V DSS SC-96 R (Max.) 95m DS(on) TSMT3 I 2.5A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Space saving small surface mount package (TSMT3) 4) Pb-free lead plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking TY llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS I Continuous drain current 2.5 A D *1 I Pulsed drain current 10 A DP V Gate - Source voltage 12 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180409 - Rev.002 RTR025P02FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -18.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 12V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -0.7 - -2.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.3 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -2.5A - 70 95 GS D Static drain - source *4 R V = -4.0V, I = -2.5A - 75 105 m DS(on) GS D on - state resistance V = -2.5V, I = -1.25A - 115 160 GS D Forward Transfer *4 Y V = -10V, I = -1.2A 2.3 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic boad (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180409 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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