X-On Electronics has gained recognition as a prominent supplier of RTR030N05HZGTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTR030N05HZGTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RTR030N05HZGTL ROHM

RTR030N05HZGTL electronic component of ROHM
RTR030N05HZGTL ROHM
RTR030N05HZGTL MOSFETs
RTR030N05HZGTL  Semiconductors

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See Product Specifications
Part No. RTR030N05HZGTL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET NCH 45V 3A SMALL SIGNAL MOSFET
Datasheet: RTR030N05HZGTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.845 ea
Line Total: USD 0.84 
Availability - 13216
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
13216
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.845
10 : USD 0.6863
100 : USD 0.429
500 : USD 0.3553
1000 : USD 0.3311
3000 : USD 0.3014
6000 : USD 0.2915

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RTR030N05HZGTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTR030N05HZGTL and other electronic components in the MOSFETs category and beyond.

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RTR030N05HZG Datasheet Nch 45V 3A Small Signal MOSFET llOutline SOT-346T V 45V DSS SC-96 R (Max.) 67m DS(on) TSMT3 I 3A D P 1.0W D llInner circuit llFeatures 1) Low on-resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT3) 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking PV llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS I Continuous drain current 3 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 12 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180330 - Rev.001 RTR030N05HZG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 3A - 48 67 GS D Static drain - source *4 R V = 4.0V, I = 3A - 53 74 m DS(on) GS D on - state resistance V = 2.5V, I = 3A - 68 95 GS D R Gate resistance f = 1MHz, open drain - 6.7 - G Forward Transfer *4 Y V = 10V, I = 3A 2.8 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180330 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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