X-On Electronics has gained recognition as a prominent supplier of SH8K25GZ0TB MOSFETs across the USA, India, Europe, Australia, and various other global locations. SH8K25GZ0TB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SH8K25GZ0TB ROHM

SH8K25GZ0TB electronic component of ROHM
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See Product Specifications
Part No.SH8K25GZ0TB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 40V NCH+NCH POWER
Datasheet: SH8K25GZ0TB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8547 ea
Line Total: USD 0.85 
Availability - 2365
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2365
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8547
10 : USD 0.6237
100 : USD 0.4257
500 : USD 0.3454
1000 : USD 0.3135
2500 : USD 0.2827
5000 : USD 0.2662
10000 : USD 0.2552

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SH8K25GZ0TB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SH8K25GZ0TB and other electronic components in the MOSFETs category and beyond.

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SH8K25 Datasheet 40V Nch+Nch Power MOSFET llOutline V 40V DSS R (Max.) 85m DS(on) SOP8 I 5.2A D P 3W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Quantity (pcs) 2500 Taping code TB Marking SH8K25 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 40 V DSS *1 I Continuous drain current 5.2 A D *2 I Pulsed drain current 8 A DP V Gate - Source voltage 12 V GSS *3 I Avalanche current, single pulse 8 A AS *3 E Avalanche energy, single pulse 0.48 mJ AS *1 P 3 D *4 P Power dissipation (total) 2 W D *5 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190527 - Rev.004 2019 ROHM Co., Ltd. All rights reserved. SH8K25 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *5 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 27.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 12V, V = 0V - - 10 A GSS GS DS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -4.6 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 5.2A - 60 85 GS D Static drain - source *6 R m DS(on) on - state resistance V = 4.5V, I = 4.0A - 80 112 GS D R Gate resistance f = 1MHz, open drain - 19 - G Forward Transfer *6 Y V = 10V, I = 4A 1.0 - - S fs DS D Admittance *1 Pw 1s, Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 10H, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a Cu board (40400.8mm) *6 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.004

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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