X-On Electronics has gained recognition as a prominent supplier of SH8K32GZETB MOSFETs across the USA, India, Europe, Australia, and various other global locations. SH8K32GZETB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SH8K32GZETB ROHM

SH8K32GZETB electronic component of ROHM
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Part No.SH8K32GZETB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 4V DRIVE NCH+NCH
Datasheet: SH8K32GZETB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0263 ea
Line Total: USD 1.03 
Availability - 14209
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14209
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0263
10 : USD 1.0164
100 : USD 0.7238
250 : USD 0.7238
500 : USD 0.6963
2500 : USD 0.6952

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SH8K32GZETB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SH8K32GZETB and other electronic components in the MOSFETs category and beyond.

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SH8K32 Datasheet 60V Nch+Nch Power MOSFET llOutline V 60V DSS R (Max.) 65m DS(on) SOP8 I 4.5A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Basic ordering unit (pcs) 2500 Taping code TB Marking SH8K32 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 60 V DSS Continuous drain current I 4.5 A D *1 I Pulsed drain current 18 A DP Gate - Source voltage V 20 V GSS *2 P 2.0 D Power dissipation (total) W *3 P 1.4 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20170116 - Rev.001 2017 ROHM Co., Ltd. All rights reserved. SH8K32 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 63.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -2.8 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 4.5A - 46 65 GS D Static drain - source *4 R V = 4.5V, I = 4.5A - 52 73 m DS(on) GS D on - state resistance V = 4.0V, I = 4.5A - 55 77 GS D R Gate resistance f = 1MHz, open drain - 5.9 - G Forward Transfer *4 Y V = 10V, I = 4.5A 4.0 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2/11 20170116 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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