SH8MA4 Datasheet 30V Nch+Pch Power MOSFET llOutline Symbol Tr1:Nch Tr2:Pch V 30V -30V DSS SOP8 R (Max.) 21.4m 29.6m DS(on) I 9.0A 8.5A D P 3.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Quantity (pcs) 2500 Taping code TB1 Marking SH8MA4 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 30 -30 V DSS *1 Continuous drain current I 9.0 8.5 A D *2 I Pulsed drain current 18 18 A DP Gate - Source voltage V 20 20 V GSS *3 I Avalanche current, single pulse 9.0 -8.5 A AS *3 E Avalanche energy, single pulse 5.7 10.5 mJ AS *1 P 3.0 D *4 P Power dissipation (total) 2.0 W D *5 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/19 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. SH8MA4 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *5 R - - 89.2 thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. Tr1 V = 0V, I = 1mA 30 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = 1mA -30 - - GS D V I = 1mA, referenced to 25 Tr1 - 21 - (BR)DSS D Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 - -22 - D V = 30V, V = 0V Tr1 - - 1 DS GS Zero gate voltage I A DSS drain current V = -30V, V = 0V Tr2 - - -1 DS GS V = 20V, V = 0V Tr1 - - 100 GS DS Gate - Source I nA GSS leakage current Tr2 V = 20V, V = 0V - - 100 GS DS V = V , I = 1mA Tr1 1.0 - 2.5 DS GS D Gate threshold V V GS(th) voltage V = V , I = 1mA Tr2 -1.0 - -2.5 DS GS D I = 1mA, referenced to 25 V Tr1 - -3 - D GS(th) Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 Tr2 - 2.9 - j D V = 10V, I = 9.0A - 16.5 21.4 GS D Tr1 V = 4.5V, I = 9.0A - 22.2 32.5 GS D Static drain - source *6 R m DS(on) on - state resistance V = -10V, I = -8.5A - 23.0 29.6 GS D Tr2 V = -4.5V, I = -8.5A - 32.0 41.3 GS D Tr1 - 3.4 - R Gate resistance f=1MHz, open drain G Tr2 - 6.1 - V = 5V, I = 9.0A Tr1 4.4 - - DS D Forward Transfer *6 Y S fs Admittance V = -5V, I = -8.5A Tr2 5.5 - - DS D *1 Pw 1s, Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 Tr1: L 0.1mH, V = 15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j Tr2: L 0.2mH, V = -15V, R = 25, Starting T = 25 Fig.6-1,6-2 DD G j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a Cu board (40400.8mm) *6 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/19 20190527 - Rev.002