SSM3K122TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K122TU Power Management Switch Applications High-Speed Switching Applications Unit AEC-Q101 qualified (Note 1) Unit:: mm mm 1.5 V drive 2.10.1 Low ON-resistance: Ron = 304 m (max) ( VGS = 1.5 V) 1.70.1 Ron = 211 m (max) ( VGS = 1.8 V) Ron = 161 m (max) ( VGS = 2.5 V) Ron = 123 m (max) ( VGS = 4.0 V) 1 3 2 Note 1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source voltage V 20 V DSS Gate-Source voltage V 10 V GSS DC I 2.0 D Drain current A Pulse I 4.0 DP 1: Gate P 800 D (Note 1) 2: Source Drain power dissipation mW P 500 D (Note 2) UFM 3: Drain Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg JJEDEDECEC Note: Using continuously under heavy loads (e.g. the application of high JJEEIITATA temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TTOOSHSHIIBABA 22--22UU11AA reliability significantly even if the operating conditions (i.e. operating WWeeiigghht: 6t: 6.6.6 m mgg ((tytypp.).) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/ Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. 2 (25.4 mm 25.4 mm 0.8 t, Cu Pad: 645 mm ) Note 2: Mounted on a FR4 board. 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm ) Start of commercial production 2007-10 2020 1 2020-06-22 Toshiba Electronic Devices & Storage Corporation 2.00.1 0.650.05 0.70.05 0.1660.05 +0.1 0.3 -0.05SSM3K122TU Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 1 mA, V = 0 V 20 (BR) DSS D GS Drain-Source breakdown voltage V V I = 1 mA, V = 10 V 12 (BR) DSX D GS Drain cutoff current I V = 20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 10 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 1.0 A (Note 3) 2.6 5.2 S fs DS D I = 1.0 A, V = 4.0 V (Note 3) 87 123 D GS I = 1.0 A, V = 2.5 V (Note 3) 112 161 D GS Drain-Source ON-resistance R m DS (ON) I = 0.5 A, V = 1.8 V (Note 3) 147 211 D GS I = 0.3 A, V = 1.5 V (Note 3) 182 304 D GS Input capacitance C 195 iss Output capacitance C V = 10 V, V = 0 V, f = 1 MHz 35 pF oss DS GS Reverse transfer capacitance C 29 rss Total Gate Charge Q 3.4 g GateSource Charge Q V = 10 V, I = 2.0 A, V = 4 V 2.3 nC gs DS D GS GateDrain Charge Q 1.1 gd Turn-on time t V = 10 V, I = 0.5 A, 8.0 on DD D Switching time ns Turn-off time t VGS = 0 to 2.5 V, RG = 4.7 9.0 off Drain-Source forward voltage V I = 2.0 A, V = 0 V (Note 3) 0.85 -1.2 V DSF D GS Note 3: Pulse test 2020 2 2020-06-22 Toshiba Electronic Devices & Storage Corporation
