SSM5H08TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter Unit: mm Nch MOSFET and schottky diode combined in one package Low R and low V DS (ON) F Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage V 20 V DS Gate-Source voltage V 12 V GSS DC I 1.5 D Drain current A Pulse I (Note 2) 6.0 DP P (Note 1) 0.5 D Drain power dissipation W t = 10s 0.8 Channel temperature T 150 C ch UFV Absolute Maximum Ratings (Ta = 25C) SCHOTTKY DIODE JEDEC JEITA Characteristics Symbol Rating Unit TOSHIBA 2-2R1A Maximum (peak) reverse voltage V 25 V RM Weight: 7 mg (typ.) Reverse voltage V 20 V R Average forward current I 0.5 A O Peak one cycle surge forward current I 2 (50 Hz) A FSM (non-repetitive) Junction temperature T 125 C j Absolute Maximum Ratings (Ta = 25C) MOSFET, DIODE COMMON Characteristics Symbol Rating Unit Storage temperature T 55 to 125 C stg T opr Operating temperature 40 to 100 C (Note 3) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm ) Note 2: Pulse width limited by max channel temperature Note 3: Operating temperature limited by max channel temperature and max junction temperature Start of commercial production 2004-01 1 2014-03-01 SSM5H08TU Marking Equivalent Circuit 5 4 5 4 KER 1 3 2 132 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance R and the drain power dissipation P vary according to the th (ch-a) D board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2 2014-03-01