SSM5H16TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H16TU DC-DC Converter Applications 1.8-V drive Unit: mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low R and Low V DS (ON) F Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 12 V GSS DC I 1.9 D Drain current A Pulse I 3.8 DP P (Note 1) 0.5 D Drain power dissipation W t = 10s 0.8 UFV Channel temperature T 150 C ch Schottky Barrier Diode (Ta = 25C) JEDEC Characteristics Symbol Rating Unit JEITA Reverse voltage V 30 V R TOSHIBA 2-2R1A Average forward current I 0.8 A O Weight: 7 mg (typ.) Peak one cycle surge forward current I 6 (50Hz) A FSM Junction temperature T 125 C j MOSFET and Diode (Ta = 25C) Characteristics Symbol Rating Unit Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 mm, Cu pad: 645 mm ) Marking Equivalent Circuit (top view) 5 4 5 4 KE3 Start of commercial production 132 1 3 2 2009-09 1 2014-03-01 SSM5H16TU MOSFET Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. MaxUnit V I = 1 mA, V = 0 V 30 (BR) DSS D GS Drain-Source breakdown voltage V V I = 1 mA, V = 12 V 18 (BR) DSX D GS Drain cut-off current I V = 30 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 12 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.4 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 1.0 A (Note 2) 2.0 3.9 S fs DS D I = 1.0 A, V = 4.0 V (Note 2) 103 133 D GS Drainsource ON-resistance R I = 0.8 A, V = 2.5 V (Note 2) 125 177 m DS (ON) D GS I = 0.5 A, V = 1.8 V (Note 2) 165 296 D GS Input capacitance C 123 iss Output capacitance C V = 15V, V = 0 V, f = 1 MHz 43 pF DS GS oss Reverse transfer capacitance C 18 rss Total gate charge Q 1.9 g V = 15V, I = 1.9 A DS D nC Gate-source charge Q 1.1 gs V = 4 V GS Gate-drain charge Q 0.8 gd Turn-on time t 9.2 on V = 15 V, I = 1.0 A, DD D Switching time ns V = 0 to 2.5 V, R = 4.7 GS G Turn-off time t 6.4 off Drain-source forward voltage V I = -1.9 A, V = 0 V (Note 2) -0.83 -1.2 V DSF D GS Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5V 90% OUT 2.5 V IN 10% 0 V 0 V DD (c) V 10 s OUT 90% V DD 10% V = 15 V DD V DS (ON) R = 4.7 t t G f r Duty 1% t t V : t , t < 5 ns on off IN r f Common Source Ta = 25C Precaution V can be expressed as voltage between gate and source when the low operating current value is I 1 mA for th D = this product. For normal switching operation, V requires a higher voltage than V and V requires a GS (on) th GS (off) lower voltage than V . th (The relationship can be established as follows: V < V < V ) GS (off) th GS (on) Be sure to take this into consideration when using the device. 2 2014-03-01 R G