SSM5N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N16FU High Speed Switching Applications Unit: mm Analog Switching Applications Suitable for high-density mounting due to compact package Low on resistance: R = 3.0 (max) ( V = 4 V) on GS : R = 4.0 (max) ( V = 2.5 V) on GS : R = 15 (max) ( V = 1.5 V) on GS Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage V 20 V DS Gate-Source voltage V 10 V GSS DC I 100 D Drain current mA Pulse I 200 DP Drain power dissipation (Ta = 25C) P (Note 1) 200 mW D JEDEC Channel temperature T 150 C ch JEITA Storage temperature range T 55 to 150 C stg TOSHIBA 2-2L1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Marking Equivalent Circuit 5 4 54 Q1 Q2 D S 1 2 3 12 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2001-03 1 2014-03-01 SSM5N16FU Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 10 V, V = 0 1 A GSS GS DS Drain-Source breakdown voltage V I = 0.1 mA, V = 0 20 V (BR) DSS D GS Drain cut-off current I V = 20 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.6 1.1 V th DS D Forward transfer admittance Y V = 3 V, I = 10 mA 40 mS fs DS D I = 10 mA, V = 4 V 1.5 3.0 D GS Drain-Source ON resistance R I = 10 mA, V = 2.5 V 2.2 4.0 DS (ON) D GS I = 1 mA, V = 1.5 V 5.2 15 D GS Input capacitance C V = 3 V, V = 0, f = 1 MHz 9.3 pF iss DS GS Reverse transfer capacitance C V = 3 V, V = 0, f = 1 MHz 4.5 pF rss DS GS Output capacitance C V = 3 V, V = 0, f = 1 MHz 9.8 pF oss DS GS Turn-on time t 70 on V = 3 V, I = 10 mA, DD D Switching time ns V = 0 to 2.5 V Turn-off time t 125 off GS Switching Time Test Circuit (a) Test circuit (b) V IN 2.5 V 90% OUT 2.5 V IN 10% 0 V 0 R L (c) V 10 s V OUT DD V DD 10% V = 3 V DD Duty 1% 90% V DS (ON) V : t , t < 5 ns IN r f t t r f (Z = 50 ) out Common Source t t on off Ta = 25C Precaution V can be expressed as voltage between gate and source when low operating current value is I = 100 A for this th D product. For normal switching operation, V requires higher voltage than V and V requires lower GS (on) th GS (off) voltage than V . (Relationship can be established as follows: V < V < V ) th GS (off) th GS (on) Please take this into consideration for using the device. 2 2014-03-01 50