SSM6J401TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J401TU DC/DC Converter Application High-Speed Switching Applications unit: mm 2.10.1 4.0V drive 1.70.1 Low ON-resistance : R = 145m (max) ( V = 4 V) DS(ON) GS : R = 73m (max) ( V = 10 V) DS(ON) GS 1 6 2 5 Absolute Maximum Ratings (Ta = 25C) 3 4 Characteristic Symbol Rating Unit Drainsource voltage V 30 V DSS Gatesource voltage V 20 V GSS DC I 2.5 D Drain current A 1, 2, 5, 6 : Drain Pulse I 5.0 DP 3 : Gate Drain power dissipation P (Note1) 500 mW D 4 : Source UF6 Channel temperature T 150 C ch Storage temperature T 55 to 150 C stg JEDEC Note 1: Mounted on an FR4 board JEITA 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm ) TOSHIBA 2-2T1D Weight: 7.0 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit V I = 1 mA, V = 0 V 30 (BR) DSS D GS Drainsource breakdown voltage V V I = 1 mA, V = 20 V 15 (BR) DSX D GS Drain cutoff current I V = 30 V, V = 0 V 10 A DSS DS GS Gate leakage current I V = 16 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 5 V, I = 1 mA 1.2 2.6 V th DS D Forward transfer admittance Y V = 5 V, I = 2.0 A (Note 2) 3.1 6.2 S fs DS D I = 2.0 A, V = 10 V (Note 2) 53 73 D GS Drainsource ON-resistance R m DS (ON) I = 1.5 A, V = 4 V (Note 2) 85 145 D GS Input capacitance C 730 iss Output capacitance C V = 15 V, V = 0 V, f = 1 MHz 110 pF DS GS oss Reverse transfer capacitance C 90 rss Q 16 Total Gate Charge g V = 15V, I = 2.5 A DS D Gate-Source Charge Q 12.8 nC gs V = 10 V GS Gate-Drain Charge Q 3.2 gd t V = 15 V, I = 2.0 A 33 Turn-on time on DD D Switching time ns V = 0 to 4 V, R = 10 t 27 Turn-off time GS G off Drainsource forward voltage V I = 2.5 A, V = 0 V (Note 2) 0.8 1.2 V DSF D GS Note 2: Pulse test Start of commercial production 2007-07 1 2014-03-01 2.00.1 1.30.1 0.70.05 0.65 0.65 +0.06 0.16-0.05 +0.1 0.3-0.05SSM6J401TU Switching Time Test Circuit (a) Test Circuit (b) V IN 0 V 10% V = 15 V DD 0 OUT R = 10 G 90% IN 4 V Duty 1% 4 V V : t , t < 5 ns IN r f V DS (ON) Common Source 90% 10 s (c) V Ta = 25C OUT 10% V DD V DD t t r f t t on off Marking Equivalent Circuit (top view) 6 5 4 65 4 KPD 1 2 3 12 3 Notice on Usage V can be expressed as the voltage between gate and source when the low operating current value is I = 1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V (The relationship can be established as follows: V < V < V ) th. GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 R G