X-On Electronics has gained recognition as a prominent supplier of SSM6J401TU,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6J401TU,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6J401TU,LF Toshiba

SSM6J401TU,LF electronic component of Toshiba
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Part No.SSM6J401TU,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET Small Signal MOSFET P-ch VDSS=-30V VGSS=+-20V ID=-2.5A RDSON=0.145Ohm @ 4V in UF6 package
Datasheet: SSM6J401TU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4741 ea
Line Total: USD 0.47 
Availability - 5718
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5718
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4741
10 : USD 0.3025
100 : USD 0.2013
500 : USD 0.1595
1000 : USD 0.1463
3000 : USD 0.1276
9000 : USD 0.1133
24000 : USD 0.1111
45000 : USD 0.11

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM6J401TU,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6J401TU,LF and other electronic components in the MOSFETs category and beyond.

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SSM6J401TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J401TU DC/DC Converter Application High-Speed Switching Applications unit: mm 2.10.1 4.0V drive 1.70.1 Low ON-resistance : R = 145m (max) ( V = 4 V) DS(ON) GS : R = 73m (max) ( V = 10 V) DS(ON) GS 1 6 2 5 Absolute Maximum Ratings (Ta = 25C) 3 4 Characteristic Symbol Rating Unit Drainsource voltage V 30 V DSS Gatesource voltage V 20 V GSS DC I 2.5 D Drain current A 1, 2, 5, 6 : Drain Pulse I 5.0 DP 3 : Gate Drain power dissipation P (Note1) 500 mW D 4 : Source UF6 Channel temperature T 150 C ch Storage temperature T 55 to 150 C stg JEDEC Note 1: Mounted on an FR4 board JEITA 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm ) TOSHIBA 2-2T1D Weight: 7.0 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit V I = 1 mA, V = 0 V 30 (BR) DSS D GS Drainsource breakdown voltage V V I = 1 mA, V = 20 V 15 (BR) DSX D GS Drain cutoff current I V = 30 V, V = 0 V 10 A DSS DS GS Gate leakage current I V = 16 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 5 V, I = 1 mA 1.2 2.6 V th DS D Forward transfer admittance Y V = 5 V, I = 2.0 A (Note 2) 3.1 6.2 S fs DS D I = 2.0 A, V = 10 V (Note 2) 53 73 D GS Drainsource ON-resistance R m DS (ON) I = 1.5 A, V = 4 V (Note 2) 85 145 D GS Input capacitance C 730 iss Output capacitance C V = 15 V, V = 0 V, f = 1 MHz 110 pF DS GS oss Reverse transfer capacitance C 90 rss Q 16 Total Gate Charge g V = 15V, I = 2.5 A DS D Gate-Source Charge Q 12.8 nC gs V = 10 V GS Gate-Drain Charge Q 3.2 gd t V = 15 V, I = 2.0 A 33 Turn-on time on DD D Switching time ns V = 0 to 4 V, R = 10 t 27 Turn-off time GS G off Drainsource forward voltage V I = 2.5 A, V = 0 V (Note 2) 0.8 1.2 V DSF D GS Note 2: Pulse test Start of commercial production 2007-07 1 2014-03-01 2.00.1 1.30.1 0.70.05 0.65 0.65 +0.06 0.16-0.05 +0.1 0.3-0.05SSM6J401TU Switching Time Test Circuit (a) Test Circuit (b) V IN 0 V 10% V = 15 V DD 0 OUT R = 10 G 90% IN 4 V Duty 1% 4 V V : t , t < 5 ns IN r f V DS (ON) Common Source 90% 10 s (c) V Ta = 25C OUT 10% V DD V DD t t r f t t on off Marking Equivalent Circuit (top view) 6 5 4 65 4 KPD 1 2 3 12 3 Notice on Usage V can be expressed as the voltage between gate and source when the low operating current value is I = 1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V (The relationship can be established as follows: V < V < V ) th. GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 R G

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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