X-On Electronics has gained recognition as a prominent supplier of SSM6J502NU,LF(T MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6J502NU,LF(T MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6J502NU,LF(T Toshiba

SSM6J502NU,LF(T electronic component of Toshiba
SSM6J502NU,LF(T Toshiba
SSM6J502NU,LF(T MOSFETs
SSM6J502NU,LF(T  Semiconductors

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See Product Specifications
Part No. SSM6J502NU,LF(T
Manufacturer: Toshiba
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Datasheet: SSM6J502NU,LF(T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.167 ea
Line Total: USD 501 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1
Multiples : 1
1 : USD 0.5865
10 : USD 0.4572
100 : USD 0.3108
500 : USD 0.2331
1000 : USD 0.1749

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1
Multiples : 1
1 : USD 0.5865
10 : USD 0.4572
100 : USD 0.3108
500 : USD 0.2331
1000 : USD 0.1749

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.167
6000 : USD 0.1506
15000 : USD 0.1408
30000 : USD 0.1292
75000 : USD 0.1244

0
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 3
Multiples : 1
3 : USD 0.3416
25 : USD 0.2575
81 : USD 0.1879
222 : USD 0.1774

   
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
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We are delighted to provide the SSM6J502NU,LF(T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6J502NU,LF(T and other electronic components in the MOSFETs category and beyond.

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SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J502NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: R = 60.5 m (max) ( V = -1.5 V) DS(ON) GS R = 38.4 m (max) ( V = -1.8 V) DS(ON) GS R = 28.3 m (max) ( V = -2.5 V) DS(ON) GS R = 23.1 m (max) ( V = -4.5 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage V 20 V DSS Gate-Source voltage V 8 V GSS DC I 6 D Drain current A Pulse I (Note 1) 24 DP P (Note 2) 1 D Power dissipation W t 10s 2 Channel temperature T 150 C ch Storage temperature T 55 to 150 C stg 1,2,5,6: Drain Note: Using continuously under heavy loads (e.g. the application of 3: Gate high temperature/current/voltage and the significant change in 4: Source UDFN6B temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. TOSHIBA 2-2AA1A Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 8.5 mg (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The pulse width limited by max channel temperature. Note 2: Mounted on FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking(Top View) Equivalent Circuit(Top View) Pin Condition(Top View) 6 5 4 6 5 4 6 5 4 SP2 Drain Source 2 3 1 2 3 1 132 Polarity marking Polarity marking (on the top) *Electrodes : on the bottom Start of commercial production 2010-11 1 2014-03-01 SSM6J502NU Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. MaxUnit V I = -1 mA, V = 0 V -20 (BR) DSS D GS Drain-Source breakdown voltage V V I = -1 mA, V = 5 V (Note 4) -15 (BR) DSX D GS Drain cut-off current I V = -20 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -2.0 A (Note 3) 8.8 17.5 S fs DS D I = -4.0 A, V = -4.5 V (Note 3) 18.2 23.1 D GS I = -4.0 A, V = -2.5 V (Note 3) 21.5 28.3 D GS Drainsource ON-resistance R m DS (ON) I = -2.5 A, V = -1.8 V (Note 3) 26.1 38.4 D GS I = -1.5 A, V = -1.5 V (Note 3) 29.7 60.5 D GS Input capacitance C 1800 iss Output capacitance V = -10 V, V = 0 V, f = 1 MHz pF C 205 oss DS GS Reverse transfer capacitance C 190 rss Total Gate Charge Q 24.8 g V = 10 V, I = 4.4 A DD D Gate-Source Charge Q 0.8 nC gs1 V = 4.5 V GS Gate-Drain Charge Q 6.8 gd Turn-on time t V = -10 V, I = -1.5 A, 25 on DD D Switching time ns V = 0 to -2.5 V, R = 4.7 Turn-off time t 133 GS G off V Drain-Source forward voltage I = 4 A, V = 0 V (Note 3) 0.7 1.2 V DSF D GS Note 3: Pulse test Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode Switching Time Test Circuit (a) Test circuit (b) V IN 0 V 90% V = 10 V DD 0 OUT R = 4.7 10% G IN 2.5 V Duty 1% 2.5 V V : t , t < 5 ns IN r f V DS (ON) Common source 90% 10 s (c) V Ta = 25C OUT 10% V DD V DD t t r f t t on off Precaution Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (-1 mA for the th D SSM6J502NU). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V . th. GS(off) th GS(on) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and power dissipation P vary depending on board material, board area, board thickness th (ch-a) D and pad area. When using this device, please take heat dissipation into consideration 2 2014-03-01 R G

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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