X-On Electronics has gained recognition as a prominent supplier of SSM6J512NU,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6J512NU,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6J512NU,LF Toshiba

SSM6J512NU,LF electronic component of Toshiba
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Part No.SSM6J512NU,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET Small-signal MOSFET Vdss=-12V, Id=-10A
Datasheet: SSM6J512NU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.3929 ea
Line Total: USD 1.39 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1767
6000 : USD 0.1739
9000 : USD 0.1722
12000 : USD 0.1704
15000 : USD 0.1687
24000 : USD 0.167
30000 : USD 0.1654
45000 : USD 0.1638
75000 : USD 0.1621

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.19
6000 : USD 0.1797
12000 : USD 0.1695
18000 : USD 0.1592
24000 : USD 0.1489

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.3929
10 : USD 0.6251
100 : USD 0.3098
500 : USD 0.2329
1000 : USD 0.1749
3000 : USD 0.1493
9000 : USD 0.1404
24000 : USD 0.127
45000 : USD 0.1226

   
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We are delighted to provide the SSM6J512NU,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6J512NU,LF and other electronic components in the MOSFETs category and beyond.

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SSM6J512NU MOSFETs Silicon P-Channel MOS SSM6J512NUSSM6J512NUSSM6J512NUSSM6J512NU 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Power Management Switches 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : R = 24.0 m (typ.) ( V = -1.8 V) DS(ON) GS R = 18.3 m (typ.) ( V = -2.5 V) DS(ON) GS R = 14.3 m (typ.) ( V = -4.5 V) DS(ON) GS 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 1,2,5,6: Drain 3: Gate 4: Source UDFN6B 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Rating Unit Drain-source voltage V -12 V DSS Gate-source voltage V 10 V GSS Drain current (Note 1) I -10 A D Drain current (pulsed) (Note 1), (Note 2) I -30 A DP Power dissipation (Note 3) P 1.25 W D Power dissipation t 10 s (Note 3) P 2.5 W D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 Note 2: Pulse width (PW) 10 ms, duty 1 % Note 3: Device mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu Pad : 645 mm2) Start of commercial production 2015-07 2015 Toshiba Corporation 2015-09-03 1 Rev.1.0SSM6J512NU Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2015 Toshiba Corporation 2015-09-03 2 Rev.1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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