X-On Electronics has gained recognition as a prominent supplier of IRFB3306PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFB3306PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFB3306PBF Infineon

Hot IRFB3306PBF electronic component of Infineon
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See Product Specifications
Part No.IRFB3306PBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N Trench 60V 120A 4V @ 150uA 4.2 mΩ @ 75A,10V TO-220 (TO-220-3) RoHS
Datasheet: IRFB3306PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.844 ea
Line Total: USD 0.84 
Availability - 22218
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
22218
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.844
10 : USD 0.7069
50 : USD 0.5317
100 : USD 0.4629
500 : USD 0.423
1100 : USD 0.402

1548
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.914
10 : USD 1.199
100 : USD 1.0868
500 : USD 0.913
1000 : USD 0.8459
2000 : USD 0.8239

2392
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.226
10 : USD 1.344
17 : USD 1.008
47 : USD 0.952
1000 : USD 0.924

841
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 53
Multiples : 1
53 : USD 2.1333
100 : USD 2.0379
250 : USD 1.9562
500 : USD 1.8855

4151
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 1
10 : USD 1.5988
100 : USD 1.3461
250 : USD 1.2951
500 : USD 1.1668
1000 : USD 0.9377
2000 : USD 0.7251

797
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 98
Multiples : 1
98 : USD 1.5798

1910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 27
Multiples : 1
27 : USD 1.5567
50 : USD 1.0627
100 : USD 0.9475
200 : USD 0.918
500 : USD 0.9148

9
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 1
10 : USD 0.796

501
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 517
Multiples : 517
517 : USD 0.9725

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRFB3306PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFB3306PBF and other electronic components in the MOSFETs category and beyond.

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The Infineon IRFB3306PBF is an N-Channel MOSFET transistor with a Trench structure and a TO-220-3 package. It has a maximum voltage rating of 60V with a maximum DC current capacity of 120A. It has a drain-source stray inductance of 4V @ 150uA and a drain-source on-resistance of 4.2 mO @ 75A, 10V. This RoHS-compliant component is designed for fast switching circuits, and the copper contacts improve heat conduction from their surface to a heatsink.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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