X-On Electronics has gained recognition as a prominent supplier of 2N7000-D26Z MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7000-D26Z MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7000-D26Z ON Semiconductor

2N7000-D26Z electronic component of ON Semiconductor
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See Product Specifications
Part No.2N7000-D26Z
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET N Trench 60V 200mA 3V @ 1mA 5 Ω @ 500mA,10V TO-92-3L RoHS
Datasheet: 2N7000-D26Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.0989 ea
Line Total: USD 197.8 
Availability - 36860
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
36860
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 0.0989
4000 : USD 0.0989
8000 : USD 0.0989
10000 : USD 0.0989
30000 : USD 0.0989

1059
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.378
10 : USD 0.2674
50 : USD 0.2114
100 : USD 0.1918
112 : USD 0.1526

3880
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 0.1171
4000 : USD 0.116
6000 : USD 0.099

9700
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 0.1601
4000 : USD 0.1578
6000 : USD 0.1555
8000 : USD 0.1532
26000 : USD 0.148

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Subcategory
Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N7000-D26Z from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7000-D26Z and other electronic components in the MOSFETs category and beyond.

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The 2N7000-D26Z is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with N-channel trench architecture produced by ON Semiconductor. It is provided in a three-lead, TO-92-3L, RoHS (Restriction of Hazardous Substances Directive) compliant package. It features a breakdown voltage of 60V and a drain current of 200mA at 3V and 5O at 500mA. The gate-source voltage is rated for 10V. This device is suitable for general purpose, low-voltage switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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