X-On Electronics has gained recognition as a prominent supplier of 2N7000-D26Z MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7000-D26Z MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7000-D26Z ON Semiconductor

2N7000-D26Z electronic component of ON Semiconductor
2N7000-D26Z ON Semiconductor
2N7000-D26Z MOSFETs
2N7000-D26Z  Semiconductors

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See Product Specifications
Part No. 2N7000-D26Z
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET N Trench 60V 200mA 3V @ 1mA 5 Ω @ 500mA,10V TO-92-3L RoHS
Datasheet: 2N7000-D26Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.0989 ea
Line Total: USD 197.8 
Availability - 1940
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
23280
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 2000
Multiples : 2000
2000 : USD 0.106
4000 : USD 0.1041
6000 : USD 0.1031
10000 : USD 0.1017
20000 : USD 0.0989

1919
Ship by Fri. 10 Jan to Wed. 15 Jan
MOQ : 5
Multiples : 5
5 : USD 0.288
50 : USD 0.2295
150 : USD 0.2044
500 : USD 0.1732
2000 : USD 0.1576
4000 : USD 0.1493

1035
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 0.378
10 : USD 0.2632
50 : USD 0.2086
100 : USD 0.189
112 : USD 0.1526
308 : USD 0.1442
1000 : USD 0.1428
1500 : USD 0.1386

1940
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 2000
Multiples : 2000
2000 : USD 0.0989

9700
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 2000
Multiples : 2000
2000 : USD 0.1602
4000 : USD 0.1578
6000 : USD 0.1555
8000 : USD 0.1531
26000 : USD 0.148

5820
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 2000
Multiples : 2000
2000 : USD 0.123
4000 : USD 0.1218
6000 : USD 0.1039

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Subcategory
Category
Brand Category
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We are delighted to provide the 2N7000-D26Z from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7000-D26Z and other electronic components in the MOSFETs category and beyond.

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The 2N7000-D26Z is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with N-channel trench architecture produced by ON Semiconductor. It is provided in a three-lead, TO-92-3L, RoHS (Restriction of Hazardous Substances Directive) compliant package. It features a breakdown voltage of 60V and a drain current of 200mA at 3V and 5O at 500mA. The gate-source voltage is rated for 10V. This device is suitable for general purpose, low-voltage switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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