DATA SHEET www.onsemi.com D N-Channel Enhancement Mode Field Effect Transistor G 2N7000, 2N7002, S NDS7002A Description These Nchannel enhancement mode field effect transistors are 1 Drain produced using onsemis proprietary, high cell density, DMOS 2 Gate technology. These products have been designed to minimize onstate 3 Source 1 resistance while providing rugged, reliable, and fast switching 1 2 2 3 3 performance. They can be used in most applications requiring up to TO92 TO92 400 mAdc and can deliver pulsed currents up to 2 A. These products CASE 135AN CASE 135AR are particularly suited for lowvoltage, lowcurrent applications, such as small servo motor control, power MOSFET gate drivers, and other MARKING DIAGRAM switching applications. Y&Z&3 Features 2N High Density Cell Design for Low R DS(on) 7000 Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability Y = Logo &Z = Assembly Plant Code This Device is PbFree and Halogen Free &3 = Date Code 2N7000 = Specific Device Code 3 1 Gate 2 Source 1 3 Drain 2 SOT23 CASE 31808 MARKING DIAGRAM &E&Y 7x2&E&G &E = Designates Space &Y = Binary Calendar Year Coding Scheme 7x2 = Specific Device Code x= 0, 1 &G = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 1998 1 Publication Order Number: January, 2022 Rev. 6 NDS7002A/D2N7000, 2N7002, NDS7002A ABSOLUTE MAXIMUM RATINGS Values are at T = 25C unless otherwise noted. C Value 2N7000 2N7002 NDS7002A Symbol Parameter Unit V DraintoSource Voltage 60 V DSS V DrainGate Voltage (R 1 MW) 60 V DGR GS V GateSource Voltage Continuous 20 V GSS GateSource Voltage Non Repetitive (tp < 50 ms) 40 I Maximum Drain Current Continuous 200 115 280 mA D Maximum Drain Current Pulsed 500 800 1500 P Maximum Power Dissipation Derated above 25C 400 200 300 mW D 3.2 1.6 2.4 mW/C T , T Operating and Storage Temperature Range 55 to 150 65 to 150 C J STG T Maximum Lead Temperature for Soldering Purposes, 300 C L 1/16inch from Case for 10 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Values are at T = 25C unless otherwise noted. C Value Symbol Parameter 2N7000 2N7002 NDS7002A Unit R Thermal Resistance, Junction to Ambient 312.5 625 417 C/W JA ELECTRICAL CHARACTERISTICS Values are at T = 25C unless otherwise noted. C Symbol Parameter Conditions Type Min. Typ. Max. Unit OFF CHARACTERISTICS BV DrainSource Breakdown V = 0 V, I = 10 A All 60 V DSS GS D Voltage I Zero Gate Voltage Drain V = 48 V, V = 0 V 2N7000 1 A DSS DS GS Current V = 48 V, V = 0 V, 1 mA DS GS T = 125C C V = 60 V, V = 0 V 2N7002 1 A DS GS NDS7002A V = 60 V, V = 0 V, 0.5 mA DS GS T = 125C C I Gate Body Leakage, V = 15 V, V = 0 V 2N7000 10 nA GSSF GS DS Forward V = 20 V, V = 0 V 2N7002 100 GS DS NDS7002A I Gate Body Leakage, V = 15 V, V = 0 V 2N7000 10 nA GSSR GS DS Reverse V = 20 V, V = 0 V 2N7002 100 GS DS NDS7002A ON CHARACTERISTICS V Gate Threshold Voltage V = V , I = 1 mA 2N7000 0.8 2.1 3 V GS(th) DS GS D V = V , I = 250 A 2N7002 1 2.1 2.5 DS GS D NDS7002A www.onsemi.com 2