2N7002E Small Signal MOSFET Single NChannel, 60 V, 310 mA, 2.5 Ohm Features Low R DS(on) www.onsemi.com Small Footprint Surface Mount Package Trench Technology V R MAX I MAX (BR)DSS DS(on) D S Prefix for Automotive and Other Applications Requiring Unique (Note 1) Site and Control Change Requirements AECQ101 Qualified and 60 V 3.0 4.5 V 310 mA PPAP Capable 2.5 10 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Simplified Schematic Applications NChannel Low Side Load Switch 3 Level Shift Circuits DCDC Converter Portable Applications i.e. DSC, PDA, Cell Phone, etc. 1 MAXIMUM RATINGS (T = 25C unless otherwise stated) J Rating Symbol Value Unit 2 DraintoSource Voltage V 60 V DSS (Top View) GatetoSource Voltage V 20 V GS Drain Current (Note 1) I mA D MARKING DIAGRAM Steady State T = 25C 260 A T = 85C 190 & PIN ASSIGNMENT A 3 Drain t < 5 s T = 25C 310 A 3 T = 85C 220 A 1 Power Dissipation (Note 1) P mW D 703 M 2 Steady State 300 t < 5 s 420 SOT23 1 2 CASE 318 Pulsed Drain Current (t = 10 s) I 1.2 A p DM STYLE 21 Gate Source Operating Junction and Storage T , T 55 to C J STG Temperature Range +150 703 = Device Code M = Date Code Source Current (Body Diode) I 300 mA S = PbFree Package Lead Temperature for Soldering Purposes T 260 C (Note: Microdot may be in either location) L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Device Package Shipping THERMAL CHARACTERISTICS 2N7002ET1G, SOT23 3000 / Tape & Reel Characteristic Symbol Max Unit S2N7002ET1G (PbFree) JunctiontoAmbient Steady State R 417 C/W JA 2N7002ET7G, SOT23 3500 / Tape & Reel (Note 1) S2N7002ET7G (PbFree) JunctiontoAmbient t 5 s (Note 1) R 300 JA For information on tape and reel specifications, including part orientation and tape sizes, please 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces) refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: June, 2019 Rev. 7 2N7002E/D2N7002E ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 75 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1 A DSS J V = 0 V, GS V = 60 V T = 125C 500 DS J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1.0 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 4.4 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 240 mA 0.86 2.5 DS(on) GS D V = 4.5 V, I = 50 mA 1.1 3.0 GS D Forward Transconductance g V = 5 V, I = 200 mA 530 mS FS DS D CHARGES AND CAPACITANCES Input Capacitance C 26.7 40 pF ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 4.6 OSS V = 25 V DS Reverse Transfer Capacitance C 2.9 RSS Total Gate Charge Q 0.81 nC G(TOT) Threshold Gate Charge Q 0.31 G(TH) V = 5 V, V = 10 V GS DS I = 240 mA D GatetoSource Charge Q 0.48 GS GatetoDrain Charge Q 0.08 GD SWITCHING CHARACTERISTICS, V = V (Note 3) GS TurnOn Delay Time t 1.7 ns d(ON) Rise Time t 1.2 r V = 10 V, V = 30 V, GS DD I = 200 mA, R = 10 TurnOff Delay Time t 4.8 D G d(OFF) Fall Time t 3.6 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.79 1.2 V SD J V = 0 V, GS I = 200 mA T = 85C 0.7 S J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 s, duty cycle 2% 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2