X-On Electronics has gained recognition as a prominent supplier of 2N7002ET1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002ET1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002ET1G ON Semiconductor

2N7002ET1G electronic component of ON Semiconductor
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See Product Specifications
Part No.2N7002ET1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: N-Channel 60 V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)
Datasheet: 2N7002ET1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0351 ea
Line Total: USD 105.3 
Availability - 75660
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
291000
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0316
9000 : USD 0.0304
27000 : USD 0.0299
51000 : USD 0.0284
102000 : USD 0.028
150000 : USD 0.0274
252000 : USD 0.0269
501000 : USD 0.0265

23748
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1223
10 : USD 0.0918
25 : USD 0.0912
100 : USD 0.0537
250 : USD 0.0532
500 : USD 0.0527
1000 : USD 0.0474
3000 : USD 0.0435
6000 : USD 0.0395
15000 : USD 0.0355

75660
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0351
6000 : USD 0.0334
9000 : USD 0.0298
15000 : USD 0.0272
21000 : USD 0.0269
30000 : USD 0.0258
75000 : USD 0.0207
150000 : USD 0.0205

21255
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 20
Multiples : 20
20 : USD 0.0425
200 : USD 0.0348
600 : USD 0.0305
3000 : USD 0.0265
9000 : USD 0.0243
21000 : USD 0.0231

538
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.252
5 : USD 0.182
10 : USD 0.1512
50 : USD 0.1022
100 : USD 0.0868

291000
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0408
9000 : USD 0.0392
27000 : USD 0.038
51000 : USD 0.0367
102000 : USD 0.0355

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N7002ET1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002ET1G and other electronic components in the MOSFETs category and beyond.

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2N7002E Small Signal MOSFET Single NChannel, 60 V, 310 mA, 2.5 Ohm Features Low R DS(on) www.onsemi.com Small Footprint Surface Mount Package Trench Technology V R MAX I MAX (BR)DSS DS(on) D S Prefix for Automotive and Other Applications Requiring Unique (Note 1) Site and Control Change Requirements AECQ101 Qualified and 60 V 3.0 4.5 V 310 mA PPAP Capable 2.5 10 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Simplified Schematic Applications NChannel Low Side Load Switch 3 Level Shift Circuits DCDC Converter Portable Applications i.e. DSC, PDA, Cell Phone, etc. 1 MAXIMUM RATINGS (T = 25C unless otherwise stated) J Rating Symbol Value Unit 2 DraintoSource Voltage V 60 V DSS (Top View) GatetoSource Voltage V 20 V GS Drain Current (Note 1) I mA D MARKING DIAGRAM Steady State T = 25C 260 A T = 85C 190 & PIN ASSIGNMENT A 3 Drain t < 5 s T = 25C 310 A 3 T = 85C 220 A 1 Power Dissipation (Note 1) P mW D 703 M 2 Steady State 300 t < 5 s 420 SOT23 1 2 CASE 318 Pulsed Drain Current (t = 10 s) I 1.2 A p DM STYLE 21 Gate Source Operating Junction and Storage T , T 55 to C J STG Temperature Range +150 703 = Device Code M = Date Code Source Current (Body Diode) I 300 mA S = PbFree Package Lead Temperature for Soldering Purposes T 260 C (Note: Microdot may be in either location) L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Device Package Shipping THERMAL CHARACTERISTICS 2N7002ET1G, SOT23 3000 / Tape & Reel Characteristic Symbol Max Unit S2N7002ET1G (PbFree) JunctiontoAmbient Steady State R 417 C/W JA 2N7002ET7G, SOT23 3500 / Tape & Reel (Note 1) S2N7002ET7G (PbFree) JunctiontoAmbient t 5 s (Note 1) R 300 JA For information on tape and reel specifications, including part orientation and tape sizes, please 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces) refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: June, 2019 Rev. 7 2N7002E/D2N7002E ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 75 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1 A DSS J V = 0 V, GS V = 60 V T = 125C 500 DS J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1.0 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 4.4 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 240 mA 0.86 2.5 DS(on) GS D V = 4.5 V, I = 50 mA 1.1 3.0 GS D Forward Transconductance g V = 5 V, I = 200 mA 530 mS FS DS D CHARGES AND CAPACITANCES Input Capacitance C 26.7 40 pF ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 4.6 OSS V = 25 V DS Reverse Transfer Capacitance C 2.9 RSS Total Gate Charge Q 0.81 nC G(TOT) Threshold Gate Charge Q 0.31 G(TH) V = 5 V, V = 10 V GS DS I = 240 mA D GatetoSource Charge Q 0.48 GS GatetoDrain Charge Q 0.08 GD SWITCHING CHARACTERISTICS, V = V (Note 3) GS TurnOn Delay Time t 1.7 ns d(ON) Rise Time t 1.2 r V = 10 V, V = 30 V, GS DD I = 200 mA, R = 10 TurnOff Delay Time t 4.8 D G d(OFF) Fall Time t 3.6 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.79 1.2 V SD J V = 0 V, GS I = 200 mA T = 85C 0.7 S J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 s, duty cycle 2% 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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