2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case: SOT563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connections: See Diagram (Note 3) Fast Switching Speed Terminals: Finish - Matte Tin annealed over Copper leadframe. Low Input/Output Leakage Solderable per MIL-STD-202, Method 208 Ultra-Small Surface Mount Package Weight: 0.003 grams (approximate) Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability D S G D G S 2 1 1 2 1 1 SOT563 G S D S G D 2 2 1 2 2 1 2N7002VAC Top View 2N7002VC (AYK Marking Code) (ASK Marking Code) Ordering Information (Note 4) Part Number Case Packaging 2N7002VC-7 SOT563 3000/Tape & Reel 2N7002VAC-7 SOT563 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See 2N7002VC/VAC Maximum Ratings T = +25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS 60 V Drain-Gate Voltage RGS 1.0M VDGR Gate-Source Voltage (Note 5) Continuous 20 V V GSS Pulsed 40 Drain Current (Note 5) Continuous 280 mA I D Drain Current (Note 5) Pulsed 1.5 A I DM Thermal Characteristics T = +25C unless otherwise specified A Characteristic Symbol Value Units Total Power Dissipation 150 mW P D Thermal Resistance, Junction to Ambient R 833 C/W JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics T = +25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 60 70 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current T = +25C 1.0 C A I V = 60V, V = 0V DSS DS GS 500 T = +125C C Gate-Body Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTIC (Note 6) Gate Threshold Voltage V 1.0 2.5 V V = V , I = 250A GS(th) DS GS D 7.5 V = 5V, I = 0.05A, GS D Static Drain-Source On-Resistance R DS (ON) 13.5 V = 10V, I = 0.5A, T = 125C GS D j On-State Drain Current 0.5 1.0 A I V = 10V, V = 7.5V D(ON) GS DS Forward Transconductance 80 mS g V = 10V, I = 0.2A FS DS D DYNAMIC CHARACTERISTICS Input Capacitance 50 pF C iss Output Capacitance 25 pF C V = 25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance C 5.0 pF rss SWITCHING CHARACTERISTICS Turn-On Delay Time t 20 ns V = 30V, I = 0.2A, R = 150, D(ON) DD D L Turn-Off Delay Time t 20 ns V = 10V, R = 25 D(OFF) GEN GEN Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at