X-On Electronics has gained recognition as a prominent supplier of 2N7002VA-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002VA-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002VA-7 Diodes Incorporated

2N7002VA-7 electronic component of Diodes Incorporated
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Part No.2N7002VA-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: Diodes Incorporated MOSFET 60V 150mW
Datasheet: 2N7002VA-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.4845
10 : USD 0.4026
100 : USD 0.2597
1000 : USD 0.208
3000 : USD 0.1988
9000 : USD 0.1988
24000 : USD 0.1916
45000 : USD 0.1886
99000 : USD 0.1845
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
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Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N7002VA-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002VA-7 and other electronic components in the MOSFETs category and beyond.

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2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case: SOT563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connections: See Diagram (Note 3) Fast Switching Speed Terminals: Finish - Matte Tin annealed over Copper leadframe. Low Input/Output Leakage Solderable per MIL-STD-202, Method 208 Ultra-Small Surface Mount Package Weight: 0.003 grams (approximate) Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability D S G D G S 2 1 1 2 1 1 SOT563 G S D S G D 2 2 1 2 2 1 2N7002VAC Top View 2N7002VC (AYK Marking Code) (ASK Marking Code) Ordering Information (Note 4) Part Number Case Packaging 2N7002VC-7 SOT563 3000/Tape & Reel 2N7002VAC-7 SOT563 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See 2N7002VC/VAC Maximum Ratings T = +25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS 60 V Drain-Gate Voltage RGS 1.0M VDGR Gate-Source Voltage (Note 5) Continuous 20 V V GSS Pulsed 40 Drain Current (Note 5) Continuous 280 mA I D Drain Current (Note 5) Pulsed 1.5 A I DM Thermal Characteristics T = +25C unless otherwise specified A Characteristic Symbol Value Units Total Power Dissipation 150 mW P D Thermal Resistance, Junction to Ambient R 833 C/W JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics T = +25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 60 70 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current T = +25C 1.0 C A I V = 60V, V = 0V DSS DS GS 500 T = +125C C Gate-Body Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTIC (Note 6) Gate Threshold Voltage V 1.0 2.5 V V = V , I = 250A GS(th) DS GS D 7.5 V = 5V, I = 0.05A, GS D Static Drain-Source On-Resistance R DS (ON) 13.5 V = 10V, I = 0.5A, T = 125C GS D j On-State Drain Current 0.5 1.0 A I V = 10V, V = 7.5V D(ON) GS DS Forward Transconductance 80 mS g V = 10V, I = 0.2A FS DS D DYNAMIC CHARACTERISTICS Input Capacitance 50 pF C iss Output Capacitance 25 pF C V = 25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance C 5.0 pF rss SWITCHING CHARACTERISTICS Turn-On Delay Time t 20 ns V = 30V, I = 0.2A, R = 150, D(ON) DD D L Turn-Off Delay Time t 20 ns V = 10V, R = 25 D(OFF) GEN GEN Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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