X-On Electronics has gained recognition as a prominent supplier of 2SJ496TZ-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SJ496TZ-E MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2SJ496TZ-E Renesas

2SJ496TZ-E electronic component of Renesas
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Part No.2SJ496TZ-E
Manufacturer: Renesas
Category: MOSFETs
Description: Trans MOSFET P-CH 60V 5A 3-Pin TO-92 Mod T/R
Datasheet: 2SJ496TZ-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
33: USD 0.8118 ea
Line Total: USD 26.79 
Availability - 0
MOQ: 33  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 33
Multiples : 1
33 : USD 0.8118

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Brand
Gate-Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SJ496TZ-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SJ496TZ-E and other electronic components in the MOSFETs category and beyond.

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Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) DPAK(S)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image 2SJ528S-E
Trans MOSFET P-CH 60V 7A 3-Pin(2+Tab) DPAK(S)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Trans MOSFET P-CH 60V 2A 4-Pin(3+Tab) UPAK T/R
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Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220FM Box
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2SJ506STR-E
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) TO-220FM Box
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image 2SJ527S-E
Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) DPAK(S)
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image 2SJ528-L(E)
Trans MOSFET P-CH 60V 7A 3-Pin(3+Tab) DPAK(L)-(2) Box
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Preliminary Datasheet R07DS0433EJ0400 2SJ496 (Previous: REJ03G0870-0300) Rev.4.00 Silicon P Channel MOS FET Jun 07, 2011 Description High speed power switching Features Low on-resistance R = 0.12 typ. (at V = 10 V, I = 2.5 A) DS (on) GS D 4 V gate drive devices. Large current capacitance I = 5 A D Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D 1. Source G 2. Drain 3. Gate 3 2 1 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage V 60 V DSS Gate to source voltage V 20 V GSS Drain current I 5 A D Note 1 Drain peak current I 20 A D (pulse) Body to drain diode reverse drain current I 5 A DR Note 3 Avalanche current I 5 A AP Note 3 Avalanche energy E 2.14 mJ AR Note 2 Channel dissipation Pch 0.9 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 100 s, duty cycle 10% 2. Value at Ta = 25C 3. Value at Tch = 25C, Rg 50 R07DS0433EJ0400 Rev.4.00 Page 1 of 7 Jun 07, 2011 2SJ496 Preliminary Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V 60 V I = 10 mA, V = 0 (BR) DSS D GS Gate to source breakdown voltage V 20 V I = 100 A, V = 0 (BR) GSS G DS Zero gate voltage drain current I 10 A V = 60 V, V = 0 DSS DS GS Gate to source leak current I 10 A V = 16 V, V = 0 GSS GS DS Gate to source cutoff voltage V 1.0 2.0 V I = 1 mA, V = 5 V GS (off) D DS Note 4 Static drain to source on state resistance R 0.12 0.16 I = 2.5 A, V = 10 V DS (on) D GS Note 4 R 0.17 0.24 I = 2.5 A, V = 4 V DS (on) D GS Note 4 Forward transfer admittance y 3 5 S I = 2.5 A, V = 10 V fs D DS Input capacitance Ciss 600 pF V = 10 V DS Output capacitance Coss 290 pF V = 0 GS f = 1 MHz Reverse transfer capacitance Crss 80 pF Turn-on delay time t 10 ns V = 10 V d (on) GS I = 2.5 A Rise time t 25 ns D r R = 12 Turn-off delay time t 95 ns L d (off) Fall time t 55 ns f Body to drain diode forward voltage V 1.0 V I = 5 A, V = 0 DF F GS Body to drain diode reverse recovery t 65 ns I = 5 A, V = 0 rr F GS time di /dt = 50 A/s F Note: 4. Pulse test R07DS0433EJ0400 Rev.4.00 Page 2 of 7 Jun 07, 2011

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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