X-On Electronics has gained recognition as a prominent supplier of 2SJ506STR-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SJ506STR-E MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2SJ506STR-E Renesas

2SJ506STR-E electronic component of Renesas

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Part No.	2SJ506STR-E
Manufacturer:	Renesas
Category:	MOSFETs
Description:	2SJ506STR-E Dual N-Channel Power MOSFET transistor with low ON-resistance and 100V drain-source voltage.
Datasheet:
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

44: USD 0.8614 ea
Line Total: USD 37.9

Availability - 0

MOQ: 44 Multiples: 1
Pack Size: 1

2SJ506STR-E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 15 Nov to Thu. 21 Nov MOQ : 44 Multiples : 1	44 : USD 0.8614

Specifications

Manufacturer Renesas Renesas
Product Category MOSFETs MOSFETs
RoHS - XON 1 1

We are delighted to provide the 2SJ506STR-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SJ506STR-E and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

2SJ506STR-E is a N-channel MOSFET manufactured by Renesas. This power transistor has a maximum drain-source voltage of 50V and a drain current of 6A, making it suitable for high power switching applications in power motor and other high power devices. It has a low on-state resistance and a low gate-source capacitance, making it ideal for switching applications requiring fast switching speeds and low total gate charge. The fast switching speed of the 2SJ506STR-E ensures high efficiency, and the integrated protection diode helps to prevent reverse voltage damage. The 2SJ506STR-E is housed in a TO-220 package, which is compatible with most commonly used PCB designs. This power transistor is ideal for high power and high speed applications, which require fast switching and low gate charge.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CEL (RENESAS) may also be referenced as

ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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