X-On Electronics has gained recognition as a prominent supplier of 2N7000-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7000-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7000-G Microchip

2N7000-G electronic component of Microchip
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See Product Specifications
Part No.2N7000-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; TO92
Datasheet: 2N7000-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 0.5291 ea
Line Total: USD 26.46 
Availability - 824
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
824
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 50
Multiples : 50
50 : USD 0.5291
500 : USD 0.394
1000 : USD 0.3881
3000 : USD 0.3822
5000 : USD 0.3765
8000 : USD 0.3709
25000 : USD 0.3654
50000 : USD 0.3599

10670
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 108
Multiples : 1
108 : USD 0.604
113 : USD 0.5747
125 : USD 0.5204
151 : USD 0.4294

3912
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 108
Multiples : 1
108 : USD 0.603
113 : USD 0.5739
125 : USD 0.5197
152 : USD 0.4289

653
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 1.106
3 : USD 0.56
10 : USD 0.518
35 : USD 0.504
94 : USD 0.476
100 : USD 0.4662

3912
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 25
Multiples : 1
25 : USD 0.5197
50 : USD 0.4289

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N7000-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7000-G and other electronic components in the MOSFETs category and beyond.

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The 2N7000-G is a N-MOSFET transistor manufactured by Microchip. It is a unipolar, three-terminal, field-effect transistor that operates with a supply voltage between 0 and 60V and provides 0.2A of drain current. The device is packaged in a TO92 package and is designed for use in amplifying or switching circuits.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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