2N7002DWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Dual N-Channel MOSFET I Max D BV R Max DSS DS(ON) Low On-Resistance T = +25C A Low Gate Threshold Voltage 60V 7.5 V = 5V 0.23A GS Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) The 2N7002DWQ is suitable for automotive applications requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. 2N7002DWQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit V Drain-Source Voltage DSS 60 V Drain-Gate Voltage R 1.0M V 60 V GS DGR Continuous V 20 V GSS Gate-Source Voltage Pulsed V 40 V GSS T = +25C A 0.23 Steady Continuous Drain Current (Note 6) V = 5V T = +70C I GS A D 0.18 A State T = +100C A 0.14 Maximum Continuous Body Diode Forward Current (Note 6) I 0.23 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 0.8 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C A 0.31 Total Power Dissipation (Note 5) T = +70C P 0.2 W A D T = +100C 0.12 A Thermal Resistance, Junction to Ambient (Note 5) Steady State R 410 C/W JA T = +25C A 0.4 Total Power Dissipation (Note 6) T = +70C P 0.25 W A D T = +100C 0.15 A Thermal Resistance, Junction to Ambient (Note 6) Steady State R 318 C/W JA R Thermal Resistance, Junction to Case (Note 6) Steady State JC 135 C/W Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 70 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current T = +25C 1.0 C I A V = 60V, V = 0V DSS DS GS T = +125C 500 C Gate-Body Leakage I 10 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.0 2.0 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance T = +25C V = 5.0V, I = 0.05A J 3.2 7.5 GS D R DS(ON) T = +125C J 4.4 13.5 V = 10V, I = 0.5A GS D On-State Drain Current I 0.5 1.0 A V = 10V, V = 7.5V D(ON) GS DS Forward Transconductance g 80 mS V = 10V, I = 0.2A FS DS D Diode Forward Voltage V 0.78 1.5 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 22 50 pF iss V = 25V, V = 0V DS GS Output Capacitance C 11 25 pF oss f = 1.0MHz Reverse Transfer Capacitance C 2.0 5.0 pF rss Turn-On Delay Time t 7.0 20 V = 30V, I = 0.2A, D(ON) DD D ns R = 150, V = 10V, L GEN Turn-Off Delay Time t 11.0 20 D(OFF) R = 25 GEN Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 5 April 2021 2N7002DWQ Diodes Incorporated www.diodes.com Document number: DS43177 Rev. 2 - 2