2N7002K www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES SOT-23 (TO-236) Low on-resistance: 2 Low threshold: 2 V (typ.) D Available 3 Low input capacitance: 25 pF Available Fast switching speed: 25 ns Low input and output leakage Available TrenchFET power MOSFET 2 2000 V ESD protection S Material categorization: for definitions of compliance 1 please see www.vishay.com/doc 99912 G Note Top View * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For Marking code: 7K example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY BENEFITS V (V) 60 DS Low offset voltage R max. ( ) at V = 10 V 2 DS(on) GS Low voltage operation Q typ. (nC) 0.4 g Easily driven without buffer I (A) 0.3 D High speed circuits Configuration Single Low error voltage APPLICATIONS D Direct logic-level interface: TTL/CMOS Drivers: G relays, solenoids, lamps, hammers, display, memories, transistors, etc. Battery operated systems Solid state relays S N-Channel MOSFET ORDERING INFORMATION Package SOT-23 Lead (Pb)-free 2N7002K-T1-E3 Lead (Pb)-free and halogen-free 2N7002K-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS T = 25 C 0.3 A b Continuous drain current (T = 150 C) I J D T = 100 C 0.19 A A a Pulsed drain current I 0.8 DM T = 25 C 0.35 A b Power dissipation P W D T = 100 C 0.14 A b Maximum junction-to-ambient R 350 C/W thJA Operating junction and storage temperature range T T -55 to +150 C J, stg Notes a. Pulse width limited by maximum junction temperature b. Surface mounted on FR4 board S17-1299-Rev. F, 21-Aug-17 Document Number: 71333 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2N7002K www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A a PARAMETER SYMBOL TEST CONDITIONS MIN.TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 10 A 60 - - DS GS D V Gate-threshold voltage V V = V , I = 250 A 1 - 2.5 GS(th) DS GS D V = 0 V, V = 20 V - - 10 DS GS A V = 0 V, V = 15 V - - 1 DS GS Gate-body leakage I V = 0 V, V = 10 V - - 150 GSS DS GS V = 0 V, V = 10 V, T = 85 C - - 1000 nA DS GS J V = 0 V, V = 5 V - - 100 DS GS V = 60 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 60 V, V = 0 V, T = 125 C - - 500 DS GS J V = 10 V, V = 7.5 V 800 - - GS DS b On-state drain current I mA D(on) V = 4.5 V, V = 10 V 500 - - GS DS V = 10 V, I = 500 mA - - 2 GS D b Drain-source on-resistance R DS(on) V = 4.5 V, I = 200 mA - - 4 GS D b Forward transconductance g V = 10 V, I = 200 mA 100 - - mS fs DS D Diode forward voltage V I = 200 mA, V = 0 V - - 1.3 V SD S GS a, b Dynamic V = 10 V, V = 4.5 V DS GS Total gate charge Q -0.4 0.6 nC g I 250 mA D Input capacitance C -30 - iss V = 25 V, V = 0 V DS GS Output capacitance C -6 - pF oss f = 1 MHz Reverse transfer capacitance C -2.5 - rss a, c Switching Turn-on time t -- 25 d(on) V = 30 V, R = 150 DD L ns I 200 mA, V = 10 V, R = 10 Turn-off time t D GEN g -- 35 d(off) Notes a. For DESIGN AID ONLY, not subject to production testing b. Pulse test: pulse width 300 s duty cycle 2 % c. Switching time is essentially independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1299-Rev. F, 21-Aug-17 Document Number: 71333 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000