2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET Part Number V Min (V) r Max ( ) V (V) I (A) (BR)DSS GS(th) D DS(on) 5 V = 10 V 0.8 to 3 0.2 2N7000 GS 2N7002 7.5 V = 10 V 1 to 2.5 0.115 GS 60 VQ1000J 5.5 V = 10 V 0.8 to 2.5 0.225 GS VQ1000P 5.5 V = 10 V 0.8 to 2.5 0.225 GS BS170 5 V = 10 V 0.8 to 3 0.5 GS Low On-Resistance: 2.5 Low Offset Voltage Direct Logic-Level Interface: TTL/CMOS Low Threshold: 2.1 V Low-Voltage Operation Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Low Input Capacitance: 22 pF Easily Driven Without Buffer Battery Operated Systems Fast Switching Speed: 7 ns High-Speed Circuits Solid-State Relays Low Input and Output Leakage Low Error Voltage TO-226AA TO-236 (TO-92) (SOT-23) 1 S G 1 G 2 3 D S 2 D 3 Top View Top View Marking Code: 72wll 2N7000 72 = Part Number Code for 2N7002 w = Week Code ll = Lot Traceability Dual-In-Line D D 1 4 1 14 TO-92-18RM S S N N 1 4 2 13 (TO-18 Lead Form) G G 1 4 3 12 1 D NC NC 4 11 G G 2 3 5 10 G 2 S S 2 3 N N 6 9 D D 2 3 S 7 8 3 Top View Top View Plastic: VQ1000J BS170 Sidebraze: VQ1000P Document Number: 70226 www.vishay.com S-04279Rev. F, 16-Jul-01 11-12N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix Single Total Quad VQ1000J/P VQ1000J VQ1000P Parameter Symbol 2N7000 2N7002 BS170 Unit Drain-Source Voltage V 60 60 60 60 60 DS Gate-Source VoltageNon-Repetitive V 40 40 30 25 V GSM Gate-Source VoltageContinuous V 20 20 20 20 20 GS T = 25 C 0.2 0.115 0.225 0.225 0.5 A Continuous Drain CurrentContinuous Drain Current I D (T = 150 C) J T = 100 C 0.13 0.073 0.14 0.14 0.175 A A a Pulsed Drain Current I 0.5 0.8 1 1 DM T = 25 C 0.4 0.2 1.3 1.3 2 0.83 A Power Dissipation P W D 0.16 0.08 0.52 0.52 0.8 T = 100 C A Thermal Resistance, Junction-to-Ambient R 312.5 625 96 96 62.5 156 C/W thJA Operating Junction and T , T 55 to 150 C J stg Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. t 50 s. p Limits 2N7000 2N7002 a Parameter Symbol Test Conditions Typ Min Max Min Max Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 10 A 70 60 60 (BR)DSS GS D V = V , I = 1 mA 2.1 0.8 3 V DS GS D Gate-Threshold Voltage V GS(th) V = V , I = 0.25 mA 2.0 1 2.5 DS GS D V = 0 V, V = 15 V 10 DS GS Gate-Body Leakage I nA GSS V = 0 V, V = 20 V 100 DS GS V = 48 V, V = 0 V 1 DS GS T = 125 C 1000 C Zero Gate Voltage Drain Current I A DSS V = 60 V, V = 0 V 1 DS GS 500 T = 125 C C V = 10 V, V = 4.5 V 0.35 0.075 DS GS b On-State Drain Current I A D(on) V = 7.5 V, V = 10 V 1 0.5 DS GS V = 4.5 V, I = 0.075 A 4.5 5.3 GS D V = 5 V, I = 0.05 A 3.2 7.5 GS D b Drain-Source On-Resistance r T = 125 C 5.8 13.5 C DSDS((on)on) V = 10 V, I = 0.5 A 2.4 5 7.5 GS D T = 125 C 4.4 9 13.5 J b Forward Transconductance g V = 10 V, I = 0.2 A 100 80 fs DS D mS b Common Source Output Conductance g V = 5 V, I = 0.05 A 0.5 os DS D Dynamic Input Capacitance C 22 60 50 iss V = 25 V, V = 0 V DS GS Output Capacitance C 11 25 25 pF oss f = 1 MHzf = 1 MHz Reverse Transfer Capacitance C 2 5 5 rss Document Number: 70226 www.vishay.com S-04279Rev. F, 16-Jul-01 11-2