: Features Low Gate Threshold Voltage Low Input Capacitance Low On-Resistance Epoxy Meets UL 94 V-0 Flammability Rating 1 &KDQQHO Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) 026)(7 Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature: -55C to +150C Thermal Resistance: 625C/W Junction to Ambient A Parameter Rating Unit Symbol D Drain-Source Voltage V 60 V DS C Gate-Source Voltage Continuous 20 V B V GS Pulsed 40 V R 1.0M Drain-Gate Voltage V 60V V GS F E DGR 0.115 A (2) Continuous Drain Current H J o I G 0.073 A Continuous 100 C D Pulsed 0.80 A K L (2) 0.20 W Power Dissipation P D DIMENSIONS o o Derating above T =25 C 1.60 mW/ C A INCHES MM DIM NOTE MIN MAX MIN MAX Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, A 0.071 0.087 1.80 2.20 <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. B 0.045 0.053 1.15 1.35 C 0.083 0.096 2.10 2.45 D 0.026 0.65 TYP. E 0.047 0.055 1.20 1.40 ,QWHUQDO 6WUXFWXUH F 0.012 0.016 0.30 0.40 D G 0.000 0.004 0.00 0.10 H 0.035 0.044 0.90 1.10 J 0.002 0.010 0.05 0.25 1. GATE 2. SOURCE K 0.006 0.016 0.15 0.40 3. DRAIN L 0.010 0.018 0.26 0.46 G 4VHHFTUFE 4PMEFS 1BE -BZPVU 0DUNLQJ . S 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-4-12182021 1/4 MCCSEMI.COM 627 1 : ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit V V =0V, I =10A 70 Drain-Source Breakdown Voltage 60 V (BR)DSS GS D (3) V V =V , I =250A V Gate-Threshold Voltage 1.0 2.0 GS(th) DS GS D I Gate-Body Leakage V =0V, V =20V 10 A GSS DS GS o V =60V, V =0V,T =25 C 1.0 DS GS C I A Zero Gate Voltage Drain Current DSS o V =60V, V =0V,T =125 C 500 DS GS C I V =7.5V, V =10V On-State Drain Current 500 1000 mA D(on) DS GS V =10V, I =300mA 1.2 2.5 GS D (3) R Drain-Source On-Resistance DS(on) V =4.5V, I =200mA 1.3 3.0 GS D g V =10V, I =200mA 80 ms Forward Transconductance fs DS D C Input Capacitance iss 22 50 C V =25V,V =0V, f=1MHz pF 11 25 Output Capacitance oss DS GS C Reverse Transfer Capacitance 2 5 rss t 3.3 20 Turn-On Time d(on) V =30V,V =10V,R =150 DD GEN L ns , I =300mA,R =6 D GEN t 9.6 Turn-Off Time 20 d(off) Note: 2. Valid Provided That Terminals are Kept at Specified Ambient Temperature. 3. Pulse Test: Pulse Width 300s, Duty Cycle2%. Rev.3-4-12182021 2/4 MCCSEMI.COM 1