2SA1213-O/ 2SA1213-Y Features High Speed Switching Time Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 PNP Epoxy Meets UL 94 V-0 Flammability Rating Silicon Epitaxial Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Transistors Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 SOT-89 Thermal Resistance: 250/W Junction to Ambient A K Parameter Symbol Rating Unit B Collector-Base Voltage V -50 V CBO V Collector-Emitter Voltage -50 V CEO C V Emitter-Base Voltage -5 V E EBO I A Collector Current -2 C D Base Current I -0.4 A B G H 500 P Collector Power Dissipation mW J C (Note2) F 1000 L L Classification Of h FE 1 2 3 DIMENSIONS Rank O Y INCHES MM Range 70-140 120-240 DIM NOTE MIN MAX MIN MAX Marking NO NY A 0.169 0.185 4.30 4.70 B 0.061 1.55 TYP. Note 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, C 0.154 0.171 3.91 4.35 <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. D 0.031 0.047 0.80 1.20 2 Note 2.Mounted on ceramic substrate (250mm x 0.8t) E 0.089 0.104 2.25 2.65 F TYP. 0.118 3.00 G 0.013 0.020 0.33 0.52 Pin Configuration - Top View Internal Structure H 0.015 0.021 0.38 0.53 J 0.014 0.017 0.35 0.44 C C K 0.055 0.063 1.40 1.60 L 1.50 TYP. 0.059 Suggested Solder Pad Layout B 1.900 0.075 mm inches 0.800 0.032 2.600 3.200 E 0.102 0.126 B C E 0.900 0.035 1.400 0.055 1.500 0.059 4.400 0.173 1.400 0.055 Rev.3-3-12012020 1/4 MCCSEMI.COM2SA1213-O/ 2SA1213-Y Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =-100A, I =0 Collector-Base Breakdown Voltage -50 V (BR)CBO C E V I =-10mA, I =0 Collector-Emitter Breakdown Voltag -50 V (BR)CEO C B V I =-100A, I =0 Emitter-Base Breakdown Voltage -5 V (BR)EBO E C I -0.1 A V =-50V, I =0 Collector-Base Cutoff Current CBO CB E I V =-5V, I =0 -0.1 A Emitter-Base Cutoff Current EBO EB C h V =-2Vdc, I =-0.5A 70 240 FE1 CE C DC Current Gain h 20 V =-2Vdc, I =-2A FE2 CE C Collector-Emitter Saturation Voltage V -0.5 V I =-1A, I =-50mA CE(sat) C B Base-Emitter Saturation Voltage V -1.2 V I =-1A, I =-50mA BE(sat) C B f V =-2V, I =-0.5A Transition Frequency 100 120 MHz T CE C C V =-10V, I =0, f=1.0MHz Collector Output Capacitance 40 pF ob CB E Rev.3-3-12012020 2/4 MCCSEMI.COM