CMPDM7002AE ENHANCED SPECIFICATION www.centralsemi.com SURFACE MOUNT SILICON N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM7002AE MOSFET is a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for high speed pulsed amplifier and driver applications. MARKING CODE: C702E SOT-23 CASE FEATURES: APPLICATIONS: ESD protection up to 1800V Load/Power switches 350mW power dissipation DC-DC converter circuits Low gate charge Power management Low r DS(ON) MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 60 V DS Drain-Gate Voltage V 60 V DG Gate-Source Voltage V 20 V GS Continuous Drain Current I 300 mA D Maximum Pulsed Drain Current I 800 mA DM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =20V, V=0 10 A GSSF GSSR GS DS I V =60V, V=0 100 nA DSS DS GS I V =60V, V =0, T=125C 500 A DSS DS GS J BV V =0, I=10A 60 70 V DSS GS D V V =V , I=250A 1.2 1.5 2.0 V GS(th) DS GS D V V =0, I=115mA 0.5 1.1 V SD GS S r V =10V, I=500mA 1.0 1.4 DS(ON) GS D r V =5.0V, I=100mA 1.1 1.8 DS(ON) GS D r V =2.5V, I=10mA 3.0 6.0 DS(ON) GS D g V =10V, I=200mA 220 mS FS DS D C V =25V, V =0, f=1.0MHz 5.0 pF rss DS GS C V =25V, V =0, f=1.0MHz 50 pF iss DS GS C V =25V, V =0, f=1.0MHz 25 pF oss DS GS Enhanced specification R3 (3-October 2013)CMPDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS TYP MAX UNITS Q V =10V, V =4.5V, I=200mA 0.5 nC g(tot) DS GS D Q V =10V, V =4.5V, I=200mA 0.2 nC gs DS GS D Q V =10V, V =4.5V, I=200mA 0.14 nC gd DS GS D t V =30V, V =10V, I=200mA 20 ns on DD GS D t R =25, R=150 45 ns off G L SOT-23 CASE - MECHANICAL OUTLINE 2 1 3 LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: C702E R3 (3-October 2013) www.centralsemi.com