2N3740 2N3740A 2N3741 2N3741A www.centralsemi.com SILICON DESCRIPTION: PNP POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE 2N3740 2N3741 MAXIMUM RATINGS: (T =25C) SYMBOL 2N3740A 2N3741A UNITS C Collector-Base Voltage V 60 80 V CBO Collector-Emitter Voltage V 60 80 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 4.0 A C Peak Collector Current I 10 A CM Continuous Base Current I 2.0 A B Power Dissipation P 25 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V , V =1.5V (2N3740, 2N3741) 100 A CEV CE CEO BE I V =Rated V , V =1.5V (2N3740A, 2N3741A) 100 nA CEV CE CEO BE I V =40V, V =1.5V, T =150C (2N3740) 1.0 mA CEV CE BE C I V =40V, V =1.5V, T =150C (2N3740A) 0.5 mA CEV CE BE C I V =60V, V =1.5V, T =150C (2N3741) 1.0 mA CEV CE BE C I V =60V, V =1.5V, T =150C (2N3741A) 0.5 mA CEV CE BE C I V =Rated V (2N3740, 2N3741) 100 A CBO CB CBO I V =Rated V (2N3740A, 2N3741A) 100 nA CBO CB CBO I V =40V (2N3740) 1.0 mA CEO CE I V =40V (2N3740A) 1.0 A CEO CE I V =60V (2N3741) 1.0 mA CEO CE I V =60V (2N3741A) 1.0 A CEO CE I V =7.0V (2N3740, 2N3741) 0.5 mA EBO EB I V =7.0V (2N3740A, 2N3741A) 100 nA EBO EB BV I =100mA (2N3740, 2N3740A) 60 V CEO C BV I =100mA (2N3741, 2N3741A) 80 V CEO C V I =1.0A, I=125mA 0.6 V CE(SAT) C B V V =1.0V, I=250mA 1.0 V BE(ON) CE C h V =1.0V, I=100mA 40 FE CE C h V =1.0V, I=250mA 30 200 FE CE C h V =1.0V, I=500mA 20 FE CE C h V =1.0V, I=1.0A 10 FE CE C h V =10V, I =50mA, f=1.0kHz 25 fe CE C f V =10V, I =100mA, f=1.0MHz 4.0 MHz T CE C C V =10V, I =0, f=100kHz 100 pF ob CB E R2 (2-September 2014)2N3740 2N3740A 2N3741 2N3741A SILICON PNP POWER TRANSISTORS TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R2 (2-September 2014) www.centralsemi.com