X-On Electronics has gained recognition as a prominent supplier of 2N3741A PBFREE Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3741A PBFREE Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3741A PBFREE Central Semiconductor

2N3741A PBFREE electronic component of Central Semiconductor
2N3741A PBFREE Central Semiconductor
2N3741A PBFREE Bipolar Transistors - BJT
2N3741A PBFREE  Semiconductors

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See Product Specifications
Part No. 2N3741A PBFREE
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT . .
Datasheet: 2N3741A PBFREE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 11.818 ea
Line Total: USD 11.82 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 11.818
90 : USD 11.818
120 : USD 11.818

0
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 2.4644

0
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 11.818

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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We are delighted to provide the 2N3741A PBFREE from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3741A PBFREE and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N3740 2N3740A 2N3741 2N3741A www.centralsemi.com SILICON DESCRIPTION: PNP POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE 2N3740 2N3741 MAXIMUM RATINGS: (T =25C) SYMBOL 2N3740A 2N3741A UNITS C Collector-Base Voltage V 60 80 V CBO Collector-Emitter Voltage V 60 80 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 4.0 A C Peak Collector Current I 10 A CM Continuous Base Current I 2.0 A B Power Dissipation P 25 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V , V =1.5V (2N3740, 2N3741) 100 A CEV CE CEO BE I V =Rated V , V =1.5V (2N3740A, 2N3741A) 100 nA CEV CE CEO BE I V =40V, V =1.5V, T =150C (2N3740) 1.0 mA CEV CE BE C I V =40V, V =1.5V, T =150C (2N3740A) 0.5 mA CEV CE BE C I V =60V, V =1.5V, T =150C (2N3741) 1.0 mA CEV CE BE C I V =60V, V =1.5V, T =150C (2N3741A) 0.5 mA CEV CE BE C I V =Rated V (2N3740, 2N3741) 100 A CBO CB CBO I V =Rated V (2N3740A, 2N3741A) 100 nA CBO CB CBO I V =40V (2N3740) 1.0 mA CEO CE I V =40V (2N3740A) 1.0 A CEO CE I V =60V (2N3741) 1.0 mA CEO CE I V =60V (2N3741A) 1.0 A CEO CE I V =7.0V (2N3740, 2N3741) 0.5 mA EBO EB I V =7.0V (2N3740A, 2N3741A) 100 nA EBO EB BV I =100mA (2N3740, 2N3740A) 60 V CEO C BV I =100mA (2N3741, 2N3741A) 80 V CEO C V I =1.0A, I=125mA 0.6 V CE(SAT) C B V V =1.0V, I=250mA 1.0 V BE(ON) CE C h V =1.0V, I=100mA 40 FE CE C h V =1.0V, I=250mA 30 200 FE CE C h V =1.0V, I=500mA 20 FE CE C h V =1.0V, I=1.0A 10 FE CE C h V =10V, I =50mA, f=1.0kHz 25 fe CE C f V =10V, I =100mA, f=1.0MHz 4.0 MHz T CE C C V =10V, I =0, f=100kHz 100 pF ob CB E R2 (2-September 2014)2N3740 2N3740A 2N3741 2N3741A SILICON PNP POWER TRANSISTORS TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R2 (2-September 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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