Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SD1760 2SD1864 VCE(sat) = 0.5V (Typ.) 2.50.2 (IC/IB = 2A / 0.2A) 6.80.2 +0.2 2.3 6.50.2 0.1 C0.5 2) Complements the 2SB1184 / 2SB1243. +0.2 5.1 0.1 0.50.1 Structure 0.65Max. 0.650.1 0.75 Epitaxial planar type 0.9 0.50.1 0.550.1 NPN silicon transistor 2.30.2 2.30.2 1.00.2 (1) (2) (3) 2.54 2.54 1.05 0.450.1 (1) (2) (3) (1) Base (1) Emitter (2) Collector (2) Collector ROHM : CPT3 (3) Emitter (3) Base EIAJ : SC-63 ROHM : ATV Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5V 3 A (DC) Collector current IC 1 4.5 A (Pulse) 2 2SD1760 15 W (Tc=25C) Collector power PC dissipation 2SD1864 1 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 Single pulse, PW=100ms 2 2 Printed circuit board, 1.7mm thick, collector copper plating 100mm or larger. Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 VIC=50A Collector-emitter breakdown voltage BVCEO 50 V IC=1mA Emitter-base breakdown voltage BVEBO 5 V IE=50A Collector cutoff current ICBO 1 A VCB=40V Emitter cutoff current IEBO 1 A VEB=4V Collector-emitter saturation voltage VCE (sat) 0.5 1 V IC/IB=2A/0.2A DC current transfer ratio hFE 120 390 VCE=3V, IC=0.5A Transition frequency fT 90 MHz VCE=5V, IE=500mA, f=30MHz Output capacitance Cob 40 pF VCB=10V, IE=0A, f=1MHz Measured using pulse current. www.rohm.com 2009.12 - Rev.A 1/3 c 2009 ROHM Co., Ltd. All rights reserved. +0.3 5.5 0.1 1.50.3 0.9 1.5 2.5 9.50.5 1.0 0.9 4.40.2 14.50.5 2SD1760 / 2SD1864 Data Sheet Packaging specifications and hFE Package Taping Code TL TV2 Basic ordering 2500 2500 Type hFE unit (pieces) 2SD1760 QR 2SD1864 QR hFE values are classified as follows: Item Q R hFE 120 to 270 180 to 390 Electrical characteristic curves 3.0 3.0 10 40mA 50mA Ta = 25C Ta = 25C VCE = 3V 35mA 45mA 5 45mA 30mA 40mA 2.5 25mA 2.5 35mA 50mA 30mA 20mA 2 25mA Ta = 100C 20mA 2.0 2.0 1 25C 15mA 25C 15mA 0.5 1.5 1.5 10mA 0.2 10mA 1.0 1.0 0.1 0.05 IB = 5mA 5mA 0.5 0.5 PC = 15W 0.02 IB = 0mA 0 0 0.01 0 123 45 0 102030 4050 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 COLLECTOR TO EMITTER VOLTAGE : V V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) CE ( Fig.2 Grounded emitter output Fig.3 Grounded-emitter output Fig.1 Grounded emitter propagation characteristics ( ) characteristics( ) characteristics 10 1000 1000 Ta = 25C VCE = 3V Ta = 25C 500 500 5 200 200 Ta = 100C 2 VCE = 5V 100 100 1 50 50 0.5 25C 3V 25C 20 20 0.2 IC/IB = 50 10 10 0.1 20 5 5 0.05 10 2 2 0.02 1 1 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig.6 Collector-emitter saturation collector current( ) collector curren( ) voltage vs. collector current 10 1000 1000 lC/lB = 10 Ta = 25C Ta = 25C 5 VCE = 5V 500 500 f = 1MHz IE = 0A 2 200 200 1 Ta = 25C 100 100 0.5 100C 50 50 VBE (sat) 25C 0.2 20 20 0.1 10 10 Ta = 100C 25C 0.05 5 5 25C VCE (sat) 0.02 2 2 0.01 1 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 1 2 5 10 20 50 100 200 5001000 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector-emitter saturation Fig.8 Gain bandwidth product vs. Fig.9 Collector output capacitance voltage vs. collector current emitter current vs. collector-base voltage Base-emitter saturation voltage vs. collector current www.rohm.com 2009.12 - Rev.A 2/3 c 2009 ROHM Co., Ltd. All rights reserved. DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (A) BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) DC CURRENT GAIN : hFE COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)