2N7002 Features Advanced Trench Process Technology Low Threshold Voltage Fast Switching Speed Epoxy Meets UL 94 V-0 Flammability Rating N-Channel Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature: -55C to +150C SOT-23 (2) Thermal Resistance: 357C/W Junction to Ambient A Parameter Symbol Rating Unit D V Drain- Source Voltage 60 V DS 3 Gate-Source Voltage V 20 V GS B C I 0.34 A Drain Current-Continuous D 1 2 F E Power Dissipation P 0.35 W D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, G H J <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. L K DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Internal Structure A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 D C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 1. GATE E 0.067 0.083 1.70 2.10 2. SOURCE F 0.018 0.024 0.45 0.60 3. DRAIN G G 0.01 0.15 0.0004 0.006 H 0.035 0.043 0.90 1.10 Marking: 7002 S J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.020 0.50 0.00 7 0.20 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-9-09132021 1/4 MCCSEMI.COM2N7002 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Drain-Source Breakdown Voltage V V =0V, I =10A V 60 (BR)DSS GS D V V =V , I =250A 1.0 2.5 V Gate-Threshold Voltage GS(th) DS GS D Gate-Body Leakage I V =0V, V =20V nA 10 GSS DS GS V =60V, V =0V nA 80 DS GS Zero Gate Voltage Drain Current I DSS o A V =60V, V =0V,T =125 C 1.0 J DS GS On-State Drain Current I V =7.5V, V =10V 500 2700 mA D(on) DS GS V =10V, I =500mA 1.2 5 GS D R Drain-Source On-Resistance DS(on) V =5V, I =50mA 1.7 7.5 GS D V =10V, I =500mA 3.75 GS D V V Drain-Source On-Voltage DS(on) V =5V, I =50mA 1.5 GS D g V =10V, I =200mA 80 ms Forward Transconductance fs DS D Diode Forward Voltage V V =0V, I =115mA V SD GS S 1.5 Maximum Continuous Drain-Source I S mA 115 Diode Forward Current C 50 Input Capacitance iss V =25V,V =0V, f=1MHz C pF Output Capacitance DS GS 25 oss C 5 Reverse Transfer Capacitance rss t Turn-On Time 3.3 20 d(on) V =30V,V =10V,R =150, DD GEN L ns I =200mA,R =25 D GEN t 9.6 20 Turn-Off Time d(off) Rev.3-9- 09132021 2/4 MCCSEMI.COM