2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description The Supertex 2N7008 is an enhancement-mode (normally- Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure Low power drive requirement and Supertexs well-proven silicon-gate manufacturing Ease of paralleling process. This combination produces a device with the Low C and fast switching speeds ISS power handling capabilities of bipolar transistors, and the Excellent thermal stability high input impedance and positive temperature coefcient Integral source-drain diode inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and High input impedance and high gain thermally-induced secondary breakdown. Complementary N- and P-Channel devices Supertexs vertical DMOS FETs are ideally suited to a Applications wide range of switching and amplifying applications where Motor controls very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching Converters speeds are desired. Ampliers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information R I DS(ON) D(ON) BV /BV DSS DGS Device Package Option (max) (min) (V) () (mA) 2N7008-G TO-92 60 7.5 500 -G indicates package is RoHS compliant (Green) Absolute Maximum Ratings Pin Conguration Parameter Value Drain-to-source voltage BV DSS SOURCE Drain-to-gate voltage BV DGS DRAIN Gate-to-source voltage 30V GATE Operating and storage temperature -55C to +150C TO-92 * Soldering temperature +300C Product Marking Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All 2 N YY = Year Sealed voltages are referenced to device ground. 7 0 0 8 WW = Week Sealed Y Y W W * Distance of 1.6mm from case for 10 seconds. = Green Packaging TO-92 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com2N7008 Thermal Characteristics I I Power Dissipation D D I I O jc ja DR DRM Package (pulsed) T = 25 C (continuous) C O O ( C/W) ( C/W) (mA) (A) (A) (W) (mA) TO-92 230 1.3 1.0 125 170 230 1.3 Note: I (continuous) is limited by max rated T. D j Electrical Characteristics (T = 25C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 60 - - V V = 0V, I = -10A DSS GS D V Gate threshold voltage 1.0 - 2.5 V V = V , I = 250A GS(th) GS DS D I Gate body leakage current - - 100 nA V = 30V, V = 0V GSS GS DS - - 1.0 V = 0V, V = 50V GS DS I Zero gate voltage drain current A DSS V = 0V, V = 50V, GS DS - - 500 O T = 125 C A I On-state drain current 500 - - mA V = 10V, V 2.0V D(ON) GS DS DS(ON) - - 7.5 V = 5.0V, I = 50mA Static drain-to-source GS D R DS(ON) on-state resistance - - 7.5 V = 10V, I = 500mA GS D G Forward transconductance 80 - - mmho V = 10V, I = 200mA FS DS D C Input capacitance - - 50 ISS V = 0V, V = 25V, GS DS C Common source output capacitance - - 25 pF OSS f = 1.0MHz C Reverse transfer capacitance - - 5.0 RSS t Turn-on time - - 20 V = 30V, I = 200mA, (ON) DD D ns R = 25 t Turn-off time - - 20 GEN (OFF) V Diode forward voltage drop - - 1.5 V V = 0V, I = 150mA SD GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT PULSE GENERATOR 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2