CXDM4060P SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CXDM4060P is a MOSFET high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET features high current, low r , low threshold voltage, and low DS(ON) gate charge. MARKING: FULL PART NUMBER SOT-89 CASE FEATURES: APPLICATIONS: Low r (48m TYP V =10V) Load/Power switches DS(ON) GS Power supply converter circuits High current (I =6.0A) D Battery powered portable equipment Logic level compatibility MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 40 V DS Gate-Source Voltage V 25 V GS Continuous Drain Current (Steady State) I 6.0 A D Maximum Pulsed Drain Current, tp=10s I 20 A DM Power Dissipation P 1.2 W D Operating and Storage Junction Temperature T , T -55 to +150 C J stg Thermal Resistance 104 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =25V, V=0 100 nA GSSF GSSR GS DS I V =40V, V=0 1.0 A DSS DS GS BV V =0, I=250A 40 V DSS GS D V V =V , I=250A 1.0 2.0 3.0 V GS(th) GS DS D V V =0, I=2.0A 1.2 V SD GS S r V =10V, I=6.0A 48 65 m DS(ON) GS D r V =4.5V, I=4.0A 80 95 m DS(ON) GS D C V =25V, V =0, f=1.0MHz 61 pF rss DS GS C V =25V, V =0, f=1.0MHz 750 pF iss DS GS C V =25V, V =0, f=1.0MHz 56 pF oss DS GS Q V =32V, V =4.5V, I=6.0A 6.5 nC g(tot) DS GS D Q V =32V, V =4.5V, I=6.0A 3.2 nC gs DS GS D Q V =32V, V =4.5V, I=6.0A 2.7 nC gd DS GS D t V =20V, V =10V, I=1.0A 18 ns on DS GS D t R =3.0, R=20 64 ns off G L R1 (28-March 2013)CXDM4060P SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET SOT-89 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source MARKING: FULL PART NUMBER R1 (28-March 2013) www.centralsemi.com
