VND5N07 STMicroelectronics

VND5N07 OMNIFET II fully autoprotected Power MOSFET Features Max. on-state resistance (per ch.) R 0.2 DS (on) 3 3 2 1 Current limitation (typ) I 5 A LIMH 1 DPAK IPAK Drain-Source clamp voltage V 70V CLAMP TO-252 TO-251 Linear current limitation Thermal shutdown Short circuit protection Integrated clamp ISOWATT200 Low current drawn from input pin SOT-82FM Diagnostic feedback through input pin Esd protection Direct access to the gate of the power mosfet Description (analog driving) The VND5N07 is a monolithic device designed in Compatible with standard Power MOSFET STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. Table 1. Device summary Order codes Package Tube Tape and reel DPAK VND5N07 VND5N0713TR IPAK VND5N07-1 ISOWATT220 VNP5N07FI SOT-82FM VNK5N07FM September 2013 Rev 4 1/24 www.st.com 24 Obsolete Product(s) - Obsolete Product(s)Contents VND5N07 Contents 1 Block diagram and pin description . 5 2 Electrical specifications 6 2.1 Absolute maximum ratings . 6 2.2 Thermal data . 6 2.3 Electrical characteristics . 7 2.4 Electrical characteristics curves 13 3 Protection features . 17 3.1 Overvoltage clamp protection 17 3.2 Linear current limiter circuit . 17 3.3 Overtemperature and short circuit protection 17 3.4 Status feedback 17 4 Package and packing information . 18 4.1 ECOPACK packages . 18 4.2 DPAK mechanical data . 18 4.3 IPAK mechanical data . 20 4.4 ISOWATT220 mechanical data 21 4.5 SOT-82FM mechanical data . 22 5 Revision history . 23 2/24 Obsolete Product(s) - Obsolete Product(s)