VND5N07-E STMicroelectronics

VND5N07-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data Description The VND5N07-E is a monolithic device designed 3 3 1 2 using STMicroelectronics VIPower M0 1 technology, intended for replacement of standard DPAK IPAK Power MOSFETs from DC to 50 KHz TO-252 TO-251 applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Features Fault feedback can be detected by monitoring the voltage at the input pin. Max. on-state resistance (per ch.) R 0.2 DS (on) Current limitation (typ) I 5 A LIMH Drain-Source clamp voltage V 70V CLAMP Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Direct access to the gate of the power mosfet (analog driving) Compatible with standard Power MOSFET Table 1. Device summary Order codes Package Tube Tape and reel DPAK VND5N07-E VND5N07TR-E IPAK VND5N07-1-E September 2013 DocID025077 Rev 2 1/22 This is information on a product in full production. www.st.comContents VND5N07-E Contents 1 Block diagram and pin description . 5 2 Electrical specifications 6 2.1 Absolute maximum ratings . 6 2.2 Thermal data . 6 2.3 Electrical characteristics . 7 2.4 Electrical characteristics curves 13 3 Protection features . 17 3.1 Overvoltage clamp protection 17 3.2 Linear current limiter circuit . 17 3.3 Overtemperature and short circuit protection 17 3.4 Status feedback 17 4 Package and packing information . 18 4.1 ECOPACK packages . 18 4.2 DPAK mechanical data . 18 4.3 IPAK mechanical data . 20 5 Revision history . 21 2/22 DocID025077 Rev 2