Product Information

VND5N07TR-E

VND5N07TR-E electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Ch 70V 5A OmniFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 1.3087 ea
Line Total: USD 3271.75

143075 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
2425 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2500
Multiples : 2500

Stock Image

VND5N07TR-E
STMicroelectronics

2500 : USD 1.963

21825 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2500
Multiples : 2500

Stock Image

VND5N07TR-E
STMicroelectronics

2500 : USD 1.383

2425 - WHS 3


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

VND5N07TR-E
STMicroelectronics

1 : USD 1.8439
10 : USD 1.5719
30 : USD 1.4228
100 : USD 1.2071
500 : USD 1.1327
1000 : USD 1.0983

143075 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2500
Multiples : 2500

Stock Image

VND5N07TR-E
STMicroelectronics

2500 : USD 1.3087

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Additional Infomation About Product

VND5N07-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data Description The VND5N07-E is a monolithic device designed 3 3 1 2 using STMicroelectronics VIPower M0 1 technology, intended for replacement of standard DPAK IPAK Power MOSFETs from DC to 50 KHz TO-252 TO-251 applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Features Fault feedback can be detected by monitoring the voltage at the input pin. Max. on-state resistance (per ch.) R 0.2 DS (on) Current limitation (typ) I 5 A LIMH Drain-Source clamp voltage V 70V CLAMP Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Direct access to the gate of the power mosfet (analog driving) Compatible with standard Power MOSFET Table 1. Device summary Order codes Package Tube Tape and reel DPAK VND5N07-E VND5N07TR-E IPAK VND5N07-1-E September 2013 DocID025077 Rev 2 1/22 This is information on a product in full production. www.st.comContents VND5N07-E Contents 1 Block diagram and pin description . 5 2 Electrical specifications 6 2.1 Absolute maximum ratings . 6 2.2 Thermal data . 6 2.3 Electrical characteristics . 7 2.4 Electrical characteristics curves 13 3 Protection features . 17 3.1 Overvoltage clamp protection 17 3.2 Linear current limiter circuit . 17 3.3 Overtemperature and short circuit protection 17 3.4 Status feedback 17 4 Package and packing information . 18 4.1 ECOPACK packages . 18 4.2 DPAK mechanical data . 18 4.3 IPAK mechanical data . 20 5 Revision history . 21 2/22 DocID025077 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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