X-On Electronics has gained recognition as a prominent supplier of VN2450N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. VN2450N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VN2450N3-G Microchip

VN2450N3-G electronic component of Microchip
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Part No.VN2450N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 500V; 0.5A; 1W; TO92
Datasheet: VN2450N3-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 0.8786 ea
Line Total: USD 7.03 
Availability - 43
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 8  Multiples: 1
Pack Size: 1
Availability Price Quantity
694
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 25
Multiples : 25
25 : USD 1.5
250 : USD 1.3625
500 : USD 1.35
1000 : USD 1.325
3000 : USD 1.3125
5000 : USD 1.2875
8000 : USD 1.2625
10000 : USD 1.2487

175
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.364
25 : USD 1.177
100 : USD 1.0747

679
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 50
Multiples : 25
50 : USD 1.9636
250 : USD 1.7836
500 : USD 1.7672
1000 : USD 1.7345
3000 : USD 1.7182

43
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 8
Multiples : 1
8 : USD 0.8786

   
Manufacturer
Product Category
Kind Of Channel
Case
Mounting
Kind Of Package
Polarisation
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Gate-Source Voltage
Pulsed Drain Current
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VN2450N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VN2450N3-G and other electronic components in the MOSFETs category and beyond.

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VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a Low input and output leakage vertical DMOS structure and Supertexs well-proven silicon-gate Low C and fast switching speeds manufacturing process. This combination produces a device with ISS High input impedance and high gain the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefcient inherent in MOS devices. Characteristic of all MOS structures, Applications this device is free from thermal runaway and thermally induced secondary breakdown. Motor controls Converters Supertexs vertical DMOS FETs are ideally suited to a wide range Ampliers of switching and amplifying applications where high breakdown Switches voltage, high input impedance, low input capacitance, and fast Power supply circuits switching speeds are desired. Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Options R I DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) TO-243AA (V) TO-92 () (mA) (SOT-89) VN2450 VN2450N3-G VN2450N8-G 500 13 500 -G indicates package is RoHS compliant (Green) Pin Congurations DRAIN DRAIN SOURCE SOURCE Absolute Maximum Ratings DRAIN GATE GATE Parameter Value TO-92 (N3) TO-243AA (SOT-89) (N8) Drain-to-source voltage BV DSS Drain-to-gate voltage BV Product Marking DGS Gate-to-source voltage 20V S i V N YY = Year Sealed 2 4 5 0 WW = Week Sealed Operating and storage temperature -55C to +150C Y Y W W = Green Packaging Soldering temperature* +300C Package may or may not include the following marks: Si or Absolute Maximum Ratings are those values beyond which damage to the device TO-92 (N3) may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All W = Code for week sealed voltages are referenced to device ground. V N 4 E W = Green Packaging * Distance of 1.6mm from case for 10 seconds. Package may or may not include the following marks: Si or TO-243AA (SOT-89) (N8) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comVN2450 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM * O Package (continuous) (pulsed) T = 25 C O O A ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-92 200 650 0.74 125 170 200 650 TO-243AA 250 750 1.6 15 78 250 750 Notes: I (continuous) is limited by max rated T , D J Mounted on FR5 board, 25mm x 25mm x 1.57mm. (T = 25C unless otherwise specied) Electrical Characteristics A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 500 - - V V = 0V, I = 2.0mA DSS GS D V Gate threshold voltage 1.5 - 4.0 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - - -5.5 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS V = 0V, GS - - 10 A V = Max Rating DS I Zero gate voltage drain current DSS V = 0.8 Max Rating, DS - - 1.0 mA O V = 0V, T = 125 C GS A I On-state drain current 0.5 - - A V = 10V, V = 25V D(ON) GS DS - - 20 V = 4.5V, I = 100mA GS D R Static drain-to-source on-state resistance DS(ON) - - 13 V = 10V, I = 400mA GS D O R Change in R with temperature - - 1.7 %/ C V = 10V, I = 400mA DS(ON) DS(ON) GS D G Forward transconductance 50 - - mmho V = 25V, I = 200mA FS DS D C Input capacitance - - 150 ISS V = 0V, GS C Common source output capacitance - - 50 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 25 RSS t Turn-on delay time - - 10 d(ON) V = 25V, t Rise time - - 10 DD r ns I = 250mA, D t Turn-off delay time - - 25 d(OFF) R = 25 GEN t Fall time - - 20 f V Diode forward voltage drop - - 1.5 V V = 0V, I = 400mA SD GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. V Switching Waveforms and Test Circuit DD 10V 90% R L INPUT PULSE GENERATOR 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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