Supertex inc. VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes Low power drive requirement a vertical DMOS structure and Supertexs well-proven Ease of paralleling silicon-gate manufacturing process. This combination Low C and fast switching speeds ISS produces a device with the power handling capabilities of Excellent thermal stability bipolar transistors and with the high input impedance and Integral source-drain diode positive temperature coefficient inherent in MOS devices. High input impedance and high gain Characteristic of all MOS structures, this device is free Applications from thermal runaway and thermally induced secondary Motor controls breakdown. Converters Amplifiers Supertexs vertical DMOS FETs are ideally suited to a Switches wide range of switching and amplifying applications where Power supply circuits high breakdown voltage, high input impedance, low input Drivers (relays, hammers, solenoids, lamps, capacitance, and fast switching speeds are desired. memories, displays, bipolar transistors, etc.) Ordering Information Product Summary R BV /BV V Part Number Package Option Packing DS(ON) DSS DGS GS(th) (V) (max) (V) (max) () VN3205N3-G 3-Lead TO-92 1000/Bag 50 0.3 2.4 VN3205N3-G P002 VN3205N3-G P003 Pin Configuration VN3205N3-G P005 3-Lead TO-92 2000/Reel VN3205N3-G P013 DRAIN VN3205N3-G P014 SOURCE VN3205N8-G 3-Lead TO-243AA (SOT-89) 2000/Reel GATE VN3205NW Die in wafer form --- TO-92 (N3) VN3205NJ Die on adhesive tape --- DRAIN VN3205ND Die in waffle pack --- For packaged products, -G indicates package is RoHS compliant (Green). TO-92 taping specifications and winding styles per EIA-468 Standard. SOURCE Devices in Wafer / Die form are RoHS compliant (Green). DRAIN GATE Refer to Die Specification VF32 for layout and dimensions. TO-243AA (SOT-89) (N8) Absolute Maximum Ratings Parameter Value Product Marking Drain-to-source voltage BV DSS SiVN YY = Year Sealed Drain-to-gate voltage BV DGS 3205 WW = Week Sealed YYWW = Green Packaging Gate-to-source voltage 20V O O Operating and storage temperature -55 C to +150 C Package may or may not include the following marks: Si or Absolute Maximum Ratings are those values beyond which damage to the device may TO-92 (N3) occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are W = Code for week sealed referenced to device ground. VN2LW = Green Packaging Package may or may not include the following marks: Si or Typical Thermal Resistance TO-243AA (SOT-89) (N8) Package ja O 3-Lead TO-92 132 C/W O 3-Lead TO-243AA (SOT-89) 133 C/W Doc. DSFP-VN3205 Supertex inc. C101612 www.supertex.comVN3205 Thermal Characteristics I I Power Dissipation D D Package I (A) I (A) * O DR DRM (continuous) (A) (pulsed) (A) T = 25 C (W) C TO-92 1.2 8.0 1.0 1.2 8.0 O TO-243AA 1.5 8.0 1.6 (T = 25 ) 1.5 8.0 A Notes: O * I (continuous) is limited by max rated T, T = 25 C. D j a Total for package. Mounted on FR5 board, 25mm x 25mm x 1.57mm. O (T = 25 C unless otherwise specified) Electrical Characteristics j Sym Parameter Min Typ Max Units Conditions BV Drain-to-Source breakdown voltage 50 - - V V = 0V, I = 10mA DSS GS D V Gate threshold voltage 0.8 - 2.4 V V = V , I = 10mA GS(th) GS DS D O V Change in V with temperature - -4.3 -5.5 mV/ C V = V , I = 10mA GS(th) GS(th) GS DS D I Gate body leakage current - 1.0 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = 0V, V = Max Rating GS DS I Zero Gate voltage drain current V = 0.8 Max Rating, DSS DS - - 1.0 mA O V = 0V, T = 125 C GS A I ON-state Drain current 3.0 14 - A V = 10V, V = 5.0V D(ON) GS DS TO-92 - - 0.45 V = 4.5V, I = 1.5A GS D TO-243AA - - 0.45 V = 4.5V, I = 0.75A Static Drain-to-Source GS D R DS(ON) ON-state resistance TO-92 - - 0.3 V = 10V, I = 3.0A GS D TO-243AA - - 0.3 V = 10V, I = 1.5A GS D O R Change in R with temperature - 0.85 1.2 %/ C V = 10V, I = 3.0A DS(ON) DS(ON) GS D G Forward transconductance 1.0 1.5 - mho V = 25V, I = 2.0A FS DS D C Input capacitance - 220 300 ISS V = 0V, GS C Common Source output capacitance - 70 120 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 20 30 RSS t Turn-on delay time - - 10 d(ON) V = 25V, DD t Rise time - - 15 r ns I = 2.0A, D t Turn-off delay time - - 25 d(OFF) R = 10 GEN t Fall time - - 25 f V Diode forward voltage drop - - 1.6 V V = 0V, I = 1.5A SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = 1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V VDD 90% INPUT Pulse R L 10% Generator 0V OUTPUT t t (ON) (OFF) R GEN t t t t r d(OFF) f d(ON) VDD INPUT D.U.T. 10% 10% OUTPUT 0V 90% 90% Doc. DSFP-VN3205 Supertex inc. C101612 2 www.supertex.com