Supertex inc. VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power handling capabilities Low C and fast switching speeds ISS of bipolar transistors and the high input impedance and Excellent thermal stability positive temperature coefficient inherent in MOS devices. Integral source-drain diode Characteristic of all MOS structures, this device is free High input impedance and high gain from thermal runaway and thermally-induced secondary breakdown. Applications Motor controls Supertexs vertical DMOS FETs are ideally suited to a Converters wide range of switching and amplifying applications where Amplifiers very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching Switches speeds are desired. Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Product Summary Part Number Package Option Packing R I DS(ON) D(ON) BV /BV DSS DGS VP0106N3-G TO-92 1000/Bag (max) (min) VP0106N3-G P002 -60V 8.0 -500mA VP0106N3-G P003 VP0106N3-G P005 TO-92 2000/Reel Pin Configuration VP0106N3-G P013 VP0106N3-G P014 -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. DRAIN Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. SOURCE Absolute Maximum Ratings Parameter Value GATE Drain-to-source voltage BV TO-92 DSS Drain-to-gate voltage BV DGS Gate-to-source voltage 20V Product Marking O O Operating and storage temperature -55 C to +150 C SiVP YY = Year Sealed Absolute Maximum Ratings are those values beyond which damage to the device may 0 106 WW = Week Sealed occur. Functional operation under these conditions is not implied. Continuous operation YYWW of the device at the absolute rating level may affect device reliability. All voltages are = Green Packaging referenced to device ground. Package may or may not include the following marks: Si or Typical Thermal Resistance TO-92 Package ja O TO-92 132 C/W Doc. DSFP-VP0106 Supertex inc. C082313 www.supertex.comVP0106 Thermal Characteristics I I Power Dissipation D D Package I I O DR DRM T = 25 C (continuous) (pulsed) C TO-92 -250mA -800mA 1.0W -250mA -800A Notes: I (continuous) is limited by max rated T . D j Electrical Characteristics (T = 25C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -60 - - V V = 0V, I = -1.0mA DSS GS D V Gate threshold voltage -1.5 - -3.5 V V = V , I = -1.0mA GS(th) GS DS D O V Change in V with temperature - 5.8 6.5 mV/ C V = V , I = -1.0mA GS(th) GS(th) GS DS D I Gate body leakage current - -1.0 -100 nA V = 20V, V = 0V GSS GS DS - - -10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - -1.0 mA O V = 0V, T = 125 C GS A -0.15 -0.25 - V = -5.0V, V = -25V GS DS I On-state drain current A D(ON) -0.5 -1.2 - V = -10V, V = -25V GS DS - 11 15 V = -5.0V, I = -100mA Static drain-to-source GS D R DS(ON) on-state resistance - 6.0 8.0 V = -10V, I = -500mA GS D O R Change in R with temperature - 0.55 1.0 %/ C V = -10V, I = -500mA DS(ON) DS(ON) GS D G Forward transconductance 150 190 - mmho V = -25V, I = -500mA FS DS D C Input capacitance - 45 60 ISS V = 0V, GS C Common source output capacitance - 22 30 pF V = -25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 3.0 8.0 RSS t Turn-on delay time - 4.0 6.0 d(ON) V = -25V, t Rise time - 3.0 10 DD r ns I = -500mA, D t Turn-off delay time - 8.0 12 d(OFF) R = 25 GEN t Fall time - 4.0 10 f V Diode forward voltage drop - -1.2 -2.0 V V = 0V, I = -1.0A SD GS SD t Reverse recovery time - 400 - ns V = 0V, I = -1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V Pulse 10% Generator INPUT R 90% GEN -10V t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) f INPUT OUTPUT 0V 90% 90% R L OUTPUT 10% 10% VDD VDD Doc. DSFP-VP0106 Supertex inc. C082313 2 www.supertex.com