X-On Electronics has gained recognition as a prominent supplier of VP2106N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. VP2106N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VP2106N3-G Microchip

VP2106N3-G electronic component of Microchip
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See Product Specifications
Part No.VP2106N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -60V; -0.5A; 1W; TO92
Datasheet: VP2106N3-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4807 ea
Line Total: USD 0.48 
Availability - 11308
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5730
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 50
Multiples : 50
50 : USD 0.6397
500 : USD 0.4584
1000 : USD 0.4497
3000 : USD 0.4452
5000 : USD 0.4049
8000 : USD 0.4009
15000 : USD 0.3969
25000 : USD 0.3929

11308
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4807
10 : USD 0.4784
25 : USD 0.4497
100 : USD 0.4347
250 : USD 0.4335
500 : USD 0.3944
1000 : USD 0.3944
5000 : USD 0.3588
10000 : USD 0.3588

32
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.302
5 : USD 0.9828
22 : USD 0.826
25 : USD 0.8134
58 : USD 0.784

4243
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 21
Multiples : 1
21 : USD 0.4952
25 : USD 0.4676
100 : USD 0.4564
500 : USD 0.436
1000 : USD 0.4334
5000 : USD 0.4127

5723
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 100
Multiples : 50
100 : USD 0.7827
500 : USD 0.5608
1000 : USD 0.5503
3000 : USD 0.5448
5000 : USD 0.4954

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VP2106N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VP2106N3-G and other electronic components in the MOSFETs category and beyond.

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VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex VP2106 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure Low power drive requirement and Supertexs well-proven silicon-gate manufacturing Ease of paralleling process. This combination produces a device with the Low C and fast switching speeds ISS power handling capabilities of bipolar transistors, and the High input impedance and high gain high input impedance and positive temperature coefcient Excellent thermal stability inherent in MOS devices. Characteristic of all MOS Integral source-to-drain diode structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Motor controls Supertexs vertical DMOS FETs are ideally suited to a Converters wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high Ampliers input impedance, low input capacitance, and fast switching Switches speeds are desired. Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information R I Package Option DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) (V) TO-92 () (mA) VP2106 VP2106N3-G -60 12 -500 -G indicates package is RoHS compliant (Green) Pin Conguration DRAIN SOURCE Absolute Maximum Ratings GATE Parameter Value TO-92 (N3) Drain-to-source voltage BV DSS Product Marking Drain-to-gate voltage BV DGS S i V P Gate-to-source voltage 20V YY = Year Sealed O O 2 1 0 6 WW = Week Sealed Operating and storage temperature -55 C to +150 C Y Y W W O = Green Packaging Soldering temperature* 300 C Absolute Maximum Ratings are those values beyond which damage to the device Package may or may not include the following marks: Si or may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All TO-92 (N3) voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comVP2106 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-92 -250 -800 0.74 125 170 -250 -800 Notes: I (continuous) is limited by max rated T . D j O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -60 - - V V = 0V, I = -1.0mA DSS GS D V Gate threshold voltage -1.5 - -3.5 V V = V , I = -1.0mA GS(th) GS DS D O V Change in V with temperature - 5.8 6.5 mV/ C V = V , I = -1.0mA GS(th) GS(th) GS DS D I Gate body leakage - -1.0 -100 nA V = 20V, V = 0V GSS GS DS - - -10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - -1.0 mA V = 0V, T = 125C GS A I On-state drain current -0.5 -1.0 - A V = -10V, V = -25V D(ON) GS DS - 11 15 V = -5.0V, I = -100mA GS D R Static drain-to-source on-state resistance DS(ON) - 9.0 12 V = -10V, I = -500mA GS D O R Change in R with temperature - 0.55 1.0 %/ C V = -10V, I = -500mA DS(ON) DS(ON) GS D G Forward transductance 150 200 - mmho V = -25V, I = -500mA FS DS D C Input capacitance - 45 60 ISS V = 0V, GS C Common source output capacitance - 22 30 pF V = -25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 3.0 8.0 RSS t Turn-on delay time - 4.0 5.0 d(ON) V = -25V, DD t Rise time - 5.0 8.0 r I = -500mA, ns D t Turn-off delay time - 5.0 9.0 d(OFF) R = 25 GEN t Fall time - 4.0 8.0 f V Diode forward voltage drop - -1.2 -2.0 V V = 0V, I = -500mA SD GS SD t Reverse recovery time - 400 - ns V = 0V, I = -500mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V PULS E 10% GENERATOR INPUT -10V R 90% GEN t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) F Outpu t 0V INPU T 90% 90% R L OUTPUT 10% 10% V V DD DD 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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